Semiconductor Patterning Using Spacer-Assisted Block Copolymer Self-Assembly
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Solution Overview
Problem
Current semiconductor patterning techniques face limitations in pattern density and feature size, particularly for dimensions less than a critical dimension, resulting in poor quality patterns.
Innovation Solution
The method involves forming a photoresist region, creating a spacer region around it, removing the spacer to form spacers and sub-gaps, and filling these sub-gaps with a self-aligning block co-polymer to control the width of the pattern elements, allowing for precise control of pattern density and pitch.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional photoresist patterning is used, then the patterning process is simple, but the pattern quality is poor for dimensions less than critical dimension
Solution Approach 1:
The patterning process is divided into multiple stages: initial photoresist patterning, spacer formation, photoresist removal, and block copolymer filling. Each stage produces a specific structural element that combines to form the final high-resolution pattern, enabling precise control of features below critical dimension
Solution Approach 2:
The spacer region is formed in advance around the photoresist structures before the photoresist is removed. This preliminary spacer formation establishes the framework for subsequent pattern transfer and defines the final pattern dimensions, ensuring high precision in the final pattern
2Quantity of substance
If pattern density is increased, then more features are packed in the same area, but pattern quality deteriorates
Solution Approach 1:
The block copolymer material exhibits different properties in different regions: the first polymer forms contact with spacers to define pattern edges with high precision, while the second polymer fills gaps to maintain appropriate spacing. This local differentiation enables high pattern density while maintaining quality
Solution Approach 2:
The self-aligning block copolymer's phase separation behavior is exploited to automatically adjust pattern dimensions and spacing. The copolymer's microphase separation creates well-defined domains that self-organize into regular patterns, enabling high density without quality loss
3Length of moving object
If feature size is reduced below critical dimension, then higher resolution is achieved, but pattern quality becomes poor
Solution Approach 1:
The spacer structures serve as intermediary elements that transfer the pattern from the photoresist layer to the final structure. The spacers maintain precise dimensional control during the photoresist removal process, enabling sub-critical-dimension features to be formed with high quality
Solution Approach 2:
The block copolymer's self-aligning property allows it to automatically organize into ordered structures without additional alignment steps. The copolymer's inherent microphase separation creates well-defined patterns at dimensions below critical dimension, achieving high resolution and quality simultaneously
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of high-resolution patterns with controlled width and density, improving the quality of semiconductor features by using the self-aligning properties of the block co-polymer to define the pattern architecture.
Implementation Method 1
the BCP is self aligning. For example, the BCP self aligns such that the second polymer is in contact with the one or more spacers and the first polymer is not in contact with any spacers
Data Source
AI summary
One or more techniques or systems for forming a pattern during semiconductor fabrication are provided herein. In some embodiments, a photo resist (PR) region is patterned and a spacer region is formed above or surrounding at least a portion of the patterned PR region. Additionally, at least some of the spacer region and the patterned PR region are removed to form one or more spacers. Additionally, a block co-polymer (BCP) is filled between the spacers. In some embodiments, the BCP comprises a first polymer and a second polymer. In some embodiments, the second polymer is removed, thus forming a pattern comprising the first polymer and the spacers. In this manner, a method for forming a pattern during semiconductor fabrication is provided, such that a width of the spacer or the first polymer is controlled.