Semiconductor Packaging With Phase-Change Material Thermal Management
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Solution Overview
Problem
Semiconductor devices in power electronic modules, such as IGBTs and SiC transistors, face thermal constraints that limit performance, particularly in vehicle applications with high thermal dissipation needs, requiring effective thermal management to maintain compactness and compatibility with engine coolant cooling systems.
Innovation Solution
The integration of phase-change material within the terminal assemblies of semiconductor devices, which evaporates and condenses to absorb and dissipate thermal energy, combined with advanced packaging and heat sinks, enhances thermal performance and reliability under demanding conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional packaging is used for semiconductor devices, then device compactness is achieved, but thermal dissipation capability is insufficient
Solution Approach 1:
The patent incorporates phase-change material (PCM) within the terminal assemblies that undergo phase transitions (solid-liquid) to absorb and dissipate thermal energy. The PCM is contained in pockets formed in the terminal assemblies, allowing it to change phase in response to thermal loads from the semiconductor chip, thereby enhancing thermal management without significantly increasing device volume.
2Temperature
If high thermal dissipation is implemented through conventional cooling systems, then thermal performance improves, but device complexity and size increase
Solution Approach 1:
The patent merges the thermal management function with the existing terminal assemblies by incorporating PCM pockets directly into the terminal structure. This integration eliminates the need for separate cooling components, maintaining device compactness while enhancing thermal dissipation capability through the phase-change material's inherent thermal regulation properties.
3Temperature
If phase-change material is integrated into terminal assemblies, then thermal energy management is enhanced, but manufacturing complexity increases
Solution Approach 1:
The terminal assemblies are segmented to include discrete pockets that contain the phase-change material. This segmentation allows the PCM to be introduced as a separate component during assembly, simplifying the manufacturing process compared to attempting to integrate thermal management functions into the semiconductor chip fabrication itself.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively manages thermal energy, maintaining a stable transistor junction temperature and extending the longevity of semiconductor devices in high-load applications, even under extreme vibrations and temperature cycles, while supporting rapid heat removal and reduced energy loss during switching events.
Implementation Method 1
which evaporates and condenses to absorb and dissipate thermal energy
Implementation Method 2
which evaporates and condenses to absorb and dissipate thermal energy
Implementation Method 3
Packaging of a semiconductor device with phase-change material for thermal performance
Implementation Method 4
combined with advanced packaging and heat sinks, enhances thermal performance
Implementation Method 5
compatible with cooling via the circulation of engine coolant
Data Source
Figure 1A
Figure 1B
Figure 2
AI summary
A semiconductor device comprises a generally planar semiconductor chip. The semiconductor chip comprises a first side and second side opposite the first side. The first side is associated with a source conductive pad. The second side is associated with a drain conductive pad. A gate pad overlies a portion of the first side. A source terminal comprises a metallic strip assembly with a series of pocket chambers spaced apart from each other and partially filled with a phase-change material filling. A drain terminal is spaced apart from the source terminal by a dielectric layer. The source terminal is bonded to the source conductive pad via a bonding interface material.