Semiconductor Peeling via Carbonaceous Layer Formation
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Solution Overview
Problem
The existing methods for manufacturing semiconductor devices using a peeling layer with carbon materials like resin and graphite are unstable at high temperatures and have low solvent resistance, making the support layer unstable during the manufacturing process.
Innovation Solution
A manufacturing method involving a support layer with a second layer containing carbon and metal elements, which forms a carbonaceous material layer or region upon heating, allowing for stable peeling and formation of a semiconductor device with improved thermal and chemical stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If a peeling layer made of carbon materials (resin, graphite) is used, then the semiconductor device can be peeled from the support, but the support becomes unstable at high temperatures and has low solvent resistance
Solution Approach 1:
A carbon-containing layer is introduced as an intermediary between the support layer and the semiconductor device. This layer serves as a mediator that enables peeling through carbonaceous material formation while the support layer itself remains stable and is not directly exposed to high temperatures or solvents. The carbon-containing layer absorbs the thermal and chemical stress, protecting the support layer's stability.
Solution Approach 2:
The invention changes the material parameters of the layer intended for peeling. Instead of using conventional carbon materials with known thermal instability, a carbon-containing layer is used that can form carbonaceous material in-situ during heating. This parameter change allows the layer to provide peeling capability through controlled carbon formation while the support layer maintains its structural integrity.
2Ease of operation
If the peeling layer is present during high temperature processing, then peeling can occur, but the peeling layer becomes thermally unstable and shrinks
Solution Approach 1:
The carbon-containing layer is prepared in advance with specific composition and structure before high-temperature processing. This preliminary preparation ensures that when heating occurs, the layer can properly form carbonaceous material for peeling without excessive shrinkage or instability. The layer's composition is optimized beforehand to withstand the thermal processing conditions.
Solution Approach 2:
The chemical composition and physical parameters of the peeling layer are changed from conventional carbon materials to a carbon-containing layer that undergoes controlled transformation during heating. This parameter change allows the layer to maintain stability during processing while still achieving the desired peeling function through carbonaceous material formation.
3Reliability
If a stable support layer is used, then manufacturing reliability improves, but peeling capability may be reduced
Solution Approach 1:
The system is segmented into distinct functional layers: a stable support layer and a separate carbon-containing layer. The support layer provides stability and structural integrity, while the carbon-containing layer provides peeling capability. This segmentation allows each layer to optimize its specific function without compromising the other.
Solution Approach 2:
The carbon-containing layer acts as an intermediary that enables peeling between the stable support layer and the semiconductor device. This intermediary layer allows the support layer to remain stable while still achieving effective peeling through the formation of carbonaceous material at the interface.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the formation of a stable semiconductor device with a carbonaceous material layer that can be easily peeled, maintaining the support's stability and ensuring effective semiconductor layer formation and removal.
Implementation Method 1
heating a second layer of a first member including a first layer, the second layer, and a third layer, in which the first layer includes a support layer, the second layer includes a compound containing carbon and at least one element selected from the group consisting of silicon and metals, the third layer includes a semiconductor layer and/or a wiring layer, and the second layer is located between the first layer and the third layer, and obtaining a second member in which a carbonaceous material layer is formed on a surface of the second layer and/or a carbonaceous material region is formed inside the second layer
Data Source
AI summary
A manufacturing method of an embodiment of a semiconductor device, the manufacturing method includes: heating a second layer of a first member including a first layer, the second layer, and a third layer, in which the first layer includes a support layer, the second layer includes a compound containing carbon and at least one element selected from the group consisting of silicon and metals, the third layer includes a semiconductor layer and/or a wiring layer, and the second layer is located between the first layer and the third layer, and obtaining a second member in which a carbonaceous material layer is formed on a surface of the second layer and/or a carbonaceous material region is formed inside the second layer; and cleaving the second member from the carbonaceous material layer or the carbonaceous material region, and obtaining a third member including the third layer.