Semiconductor Device Peeling via Peripheral Substrate Cutting
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Solution Overview
Problem
The existing methods for manufacturing semiconductor devices face challenges in forming stable wiring and insulating layers on support substrates, particularly in peripheral areas, leading to uneven peeling and reduced yield due to scratches and nonuniformity during the electroplating process.
Innovation Solution
A method involving a support substrate with a peeling layer, where a wiring layer is formed partially, a semiconductor chip is arranged, and an encapsulating layer is applied, followed by cutting the peripheral substrate portions and peeling the intermediate laminated body using the peeling layer as a boundary, ensuring stable peeling regardless of film unevenness or scratches.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If peeling is performed across the entire support substrate including peripheral portions, then complete removal of the support substrate is achieved, but uneven peeling occurs in peripheral portions due to nonuniformity or scratches in the wiring layer and insulating layer
Solution Approach 1:
The support substrate is divided into two distinct regions: a first region where the wiring layer and insulating layer are formed with stable film thickness, and a second peripheral region that is excluded from the peeling process. This segmentation allows the peeling operation to be performed only on the first region where uniform peeling can be achieved, avoiding the problematic peripheral portions that would cause uneven peeling.
2Area of stationary object
If wiring layer and insulating layer are formed on peripheral portions of support substrate, then complete device coverage is achieved, but stable film thickness cannot be formed due to unstable film formation conditions
Solution Approach 1:
The support substrate is designed with different functional zones: a first region with stable film formation characteristics where wiring and insulating layers are formed with controlled thickness, and a second peripheral region where film formation conditions are unstable. By limiting the wiring layer and insulating layer formation to the first region, the patent ensures local quality control and achieves stable film thickness where it matters for device functionality.
3Ease of manufacture
If power supply mechanism is brought into contact with peripheral portions for electroplating, then wiring layer formation is completed, but scratches and damage occur in peripheral portions
Solution Approach 1:
The second peripheral region of the support substrate is extracted or removed from the peeling process. By cutting away this peripheral region before peeling, the harmful effects of scratches and damage caused by power supply mechanism contact during electroplating are eliminated. The wiring layer formation can still be completed on the first region without exposing the final peeling interface to peripheral portion defects.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for stable peeling of intermediate laminated bodies, improving the yield of semiconductor devices by mitigating the adverse effects of film unevenness and scratches in peripheral areas, resulting in more reliable manufacturing processes.
Implementation Method 1
mechanically peeling the intermediate laminated body from the support substrate with the peripheral portion cut away, with the peeling layer being as a boundary
Data Source
AI summary
A method of manufacturing a semiconductor device, includes: preparing a support substrate having a peeling layer formed on a main surface side; partially forming a wiring layer above the peeling layer; arranging a semiconductor chip on the support substrate so that a pad of the semiconductor chip is electrically connected to the wiring layer; forming an encapsulating layer that encapsulates at least a part of the wiring layer and the semiconductor chip and is in contact with the peeling layer or a layer above the peeling layer so as to form an intermediate laminated body including the semiconductor chip, the wiring layer, and the encapsulating layer on the support substrate; cutting a peripheral portion of the support substrate after forming the intermediate laminated body; and mechanically peeling the intermediate laminated body from the support substrate with the peripheral portion cut away, with the peeling layer being as a boundary.