Semiconductor Device Thermal Management via Periodic Element Operation
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Solution Overview
Problem
Conventional semiconductor devices for power conversion face challenges in inhibiting temperature increase of active elements, leading to performance degradation and increased chip area and cost, as existing techniques for heat dispersion are insufficient and inefficient.
Innovation Solution
The semiconductor device incorporates a substrate with a thermal diffusion coefficient, featuring alternating units of transistors and diodes that operate on different timings, with a distance between their gravity centers equal to or less than twice the thermal diffusion length, allowing for both spatial and temporal heat diffusion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional spatial heat dispersion techniques are used, then temperature uniformity is improved, but chip area increases and cost increases
Solution Approach 1:
The patent applies periodic action by alternating the operation of first and second active elements on different timings. The first active element operates while the second is inactive, then they switch roles. This temporal alternation allows heat to dissipate from one element while the other is active, achieving temperature control without requiring large spatial separation between elements, thus reducing chip area while maintaining temperature uniformity.
2Area of stationary object
If active elements are placed closer together to reduce chip area, then chip area is reduced, but temperature control becomes difficult and performance degrades
Solution Approach 1:
By implementing periodic operation where first and second active elements alternate their active and inactive states, the patent enables effective heat management in compact configurations. When one element is active and generating heat, the other is inactive and can dissipate heat, preventing excessive temperature rise even when elements are placed close together, thus maintaining temperature control while reducing chip area.
Solution Approach 2:
The patent applies discarding and recovering by allowing one active element to discard heat during its inactive period while the other element operates. The element that was active and hot is now inactive and cooling down, effectively recovering its thermal state. This alternating discard-recover cycle between paired elements enables dense packing while maintaining acceptable temperature levels.
3Strength
If wide-gap semiconductors are used to achieve high breakdown voltage, then breakdown voltage is improved, but on-resistance and temperature management become critical challenges
Solution Approach 1:
The patent addresses temperature management in wide-gap semiconductor devices by implementing periodic operation of paired active elements. This temporal alternation allows each element to dissipate heat during its inactive period, preventing excessive temperature rise that would compromise reliability. This enables the device to maintain high breakdown voltage characteristics while effectively managing temperature to ensure operational reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces maximum element temperature by about 20 degrees, enhancing reliability and reducing chip area and cost by preventing excessive heating, while maintaining high breakdown voltage and low on-resistance.
Implementation Method 1
a substrate having a thermal diffusion coefficient D; a first element unit formed on the substrate, the first element including a first active element; and a second element unit being adjacent to the first element unit on the substrate, the second element including a second active element, the second active element acting on a different timing from the first active element
Data Source
AI summary
A semiconductor device which is capable of operating at an operation frequency “f”, includes a substrate, a first element unit and a second element unit. The substrate has a thermal diffusion coefficient “D”. The first element unit is formed on the substrate. The first element includes a first active element. The second element unit is adjacent to the first element unit on the substrate. The second element includes a second active element. The second active element acts on a different timing from the first active element. Moreover, a distance of between a first gravity center of the first element unit and a second gravity center of the second element unit is equal to or less than twice of a thermal diffusion length (D/πf)1/2.