Semiconductor Device Peripheral Contact Plug Dummy Rings

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Solution Overview

Problem

The existing semiconductor manufacturing processes face challenges in simplifying the fabrication of three-dimensional memory cell arrays, particularly in minimizing device size while maintaining efficient operation and reducing manufacturing complexity.

Innovation Solution

The proposed semiconductor device and manufacturing method involve a substrate with distinct regions, featuring a cell stack structure, a dummy buffer stack structure, and conductive rings, which allow for the formation of peripheral contact plugs and pillars that penetrate insulating layers, enabling efficient electrical connections and reducing the need for complex etching processes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of stationary object

If three-dimensional memory cell arrays are implemented to minimize device size, then integration density is improved, but manufacturing complexity increases

Engineering Contradiction:
Improvedevice sizeVSAvoidmanufacturing complexity
Core Design Contradiction:
Area of stationary objectVSDevice complexity

Solution Approach 1:

The substrate is divided into a memory cell region and a peripheral circuit region, allowing independent optimization of each area. The cell stack structure and dummy buffer stack structure are segmented to enable separate formation processes, reducing overall manufacturing complexity while maintaining high integration density.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent transitions from planar two-dimensional memory structures to three-dimensional vertical stack structures. Memory cells are arranged in vertical stacks with multiple levels, enabling significantly higher integration density without proportionally increasing manufacturing complexity through standardized 3D formation processes.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Productivity

If peripheral contact plugs are formed to enable efficient electrical connections, then operational efficiency is improved, but etching process complexity increases

Engineering Contradiction:
Improveoperational efficiencyVSAvoidetching process complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The dummy buffer stack structure is formed in advance in the peripheral circuit region before final contact hole formation. This preliminary structure guides subsequent etching processes, enabling peripheral contact plugs to be formed more efficiently with reduced process complexity while ensuring proper electrical connections to the channel layer.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The dummy buffer stack structure serves as an intermediary element that facilitates the formation of peripheral contact plugs. It provides a template and structural guide during manufacturing, simplifying the etching process while enabling efficient electrical connections between peripheral circuits and memory cells.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Ease of manufacture

If cell stack structure and dummy buffer stack structure are formed alternately, then manufacturing process is simplified, but structural complexity increases

Engineering Contradiction:
Improvemanufacturing process simplicityVSAvoidstructural complexity
Core Design Contradiction:
Ease of manufactureVSDevice complexity

Solution Approach 1:

The cell stack structure and dummy buffer stack structure are merged into a single alternating formation process. Both structures use the same interlayer insulating layers and conductive patterns stacked alternately, allowing simultaneous or sequential formation through unified manufacturing steps rather than separate complex processes.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The alternating stack structure serves multiple functions: it forms both operational memory cells and dummy structures for process control, provides mechanical support, enables electrical connections, and facilitates heat dissipation. This multi-functionality reduces overall manufacturing complexity despite the apparent structural complexity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS10636806B2Semiconductor device and manufacturing method thereof
Publication Date: 2020.04.28 MIMIRIP LLC
  • US10636806B2 patent drawing
  • US10636806B2 patent drawing
  • US10636806B2 patent drawing

AI summary

A semiconductor device includes a substrate, a cell stack structure, a channel layer, a peripheral contact plug, and first dummy conductive rings. The substrate may include a first region and a second region. The cell stack structure may include interlayer insulating layers and conductive patterns, which are alternately stacked over the first region of the substrate. The channel layer may penetrate the cell stack structure. The peripheral contact plug may extend in parallel to the channel layer over the second region of the substrate. The first dummy conductive rings may be disposed at the same levels as the conductive patterns, are spaced apart from the peripheral contact plug, and surround the peripheral contact plug.