Semiconductor Peripheral Word Line Dielectric Segmentation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The increasing integration of semiconductor devices leads to higher process difficulties and reduced production yields, affecting their reliability and electrical properties due to increased complexity.
Innovation Solution
A semiconductor device design featuring a lower dielectric pattern that covers both the lateral and top surfaces of a peripheral word line, with a contact plug penetrating the pattern and a filling pattern surrounding the contact pad, enhancing electrical properties and reliability by reducing electromagnetic interference and allowing easier defect complementation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If increasing integration of semiconductor devices is pursued, then device functionality and capacity are improved, but process difficulty increases and production yields decrease
Solution Approach 1:
The lower dielectric layer is segmented into two distinct parts: a first part covering the lateral surface of the peripheral word line and a second part covering the top surface. This segmentation allows each part to be optimized independently for its specific function, reducing overall process complexity while maintaining high integration benefits
Solution Approach 2:
Different regions of the dielectric structure are assigned different properties and functions. The first part of the lower dielectric provides lateral coverage and electrical isolation, while the second part provides top surface coverage and planarization. This local differentiation enables tailored optimization for each region's specific requirements
2Adaptability or versatility
If increasing integration of semiconductor devices is pursued, then device functionality is improved, but production yields decrease
Solution Approach 1:
The lower dielectric pattern is formed in advance to cover both lateral and top surfaces of peripheral word lines before subsequent processing steps. This preliminary protective action prevents defects and ensures proper electrical isolation early in the fabrication process, reducing yield losses in later stages
Solution Approach 2:
The dual-part lower dielectric structure provides beforehand protection against potential failures by ensuring complete coverage of the peripheral word line from both lateral and top perspectives, cushioning against process variations and defects that could otherwise reduce production yields
3Ease of manufacture
If conventional dielectric coverage is used, then manufacturing is simpler, but electrical properties and reliability deteriorate due to electromagnetic interference
Solution Approach 1:
The dielectric structure is divided into a first part for lateral coverage and a second part for top surface coverage, with each part optimized for its specific electrical isolation function. This segmentation effectively reduces electromagnetic interference while maintaining manufacturing feasibility through standardized processing steps
Solution Approach 2:
The solution transitions from conventional single-layer dielectric coverage to a two-dimensional coverage approach with the first part extending laterally and the second part extending vertically on top. This dimensional expansion provides comprehensive electromagnetic shielding without significantly increasing manufacturing complexity
Data Source
AI summary
Disclosed is a semiconductor device comprising a peripheral word line disposed on a substrate, a lower dielectric pattern covering the peripheral word line and including a first part that covers a lateral surface of the peripheral word line and a second part that covers a top surface of the peripheral word line, a contact plug on one side of the peripheral word line and penetrating the first and second parts, and a filling pattern in contact with the second part of the lower dielectric pattern and penetrating at least a portion of the second part. The contact plug includes a contact pad disposed on a top surface of the lower dielectric pattern, and a through plug penetrating the first and second parts. The filling pattern surrounds a lateral surface of the contact pad. The first and second parts include the same material.