Semiconductor Phase Shifter Layout for Fast Wide-Range Beam Steering
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Solution Overview
Problem
Existing phase shifters in communication technologies face challenges in achieving low consumption, fast phase shifting speed, and efficient control power, especially in phased array antennas where ideal phase shifters should have consistent consumption across different phase states and rapid phase adjustment capabilities.
Innovation Solution
A phase shifter design incorporating a substrate with a signal transmission structure, a conductive structure, semiconductor structures, insulating layers, and bias voltage lines, where semiconductor structures form equivalent capacitors with the signal transmission and conductive structures, allowing for rapid capacitance adjustments to change phase velocity and achieve quick phase shifts, thereby enhancing response speed and phase shift range.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If traditional liquid crystal phase shifters are used, then the phase shifter can change the phase of electromagnetic wave signals, but the response speed is slow and the phase shift range is limited
Solution Approach 1:
The patent changes the fundamental operating parameter from liquid crystal material properties to semiconductor capacitance properties. By utilizing the voltage-dependent capacitance characteristics of semiconductor structures (such as varactor diodes or MOS capacitors), the phase shifter achieves faster response speeds (order of nanoseconds compared to milliseconds for liquid crystal) and wider phase shift ranges through broader capacitance modulation capabilities.
Solution Approach 2:
The patent replaces the liquid crystal optical-mechanical system with a semiconductor electrical system. Instead of using liquid crystal molecules that reorient under electric fields to modulate phase, the invention uses semiconductor structures where voltage-controlled capacitance changes directly modulate the phase of RF signals, eliminating the slow molecular reorientation mechanism.
2Ease of operation
If phase shifters operate in different phase states, then they can achieve phase modulation, but the consumption varies across different phase states
Solution Approach 1:
The semiconductor structures inherently maintain their capacitance state without requiring continuous power input. Once a voltage is applied to set the capacitance value for a specific phase state, the structure holds that state without additional energy consumption, enabling consistent power consumption across different phase states.
3Speed
If phase shifters are designed for fast phase shifting, then the response speed improves, but the power consumption increases
Solution Approach 1:
The phase shifter uses periodic or pulsed voltage signals to control the semiconductor structures rather than continuous high power. By applying voltage only when phase transitions are needed and maintaining states without continuous power, the system achieves fast switching speeds while minimizing average power consumption.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed phase shifter achieves a fast response speed and a wide phase shift range with low power consumption by adjusting capacitance values through charge redistribution in semiconductor structures, outperforming traditional liquid crystal phase shifters in terms of speed and adjustment range.
Implementation Method 1
semiconductor structures form equivalent capacitors with the signal transmission and conductive structures, allowing for rapid capacitance adjustments to change phase velocity
Implementation Method 2
adjusting capacitance values through charge redistribution in semiconductor structures
Data Source
AI summary
A phase shifter includes a substrate, a signal transmission structure disposed on the substrate, and a phase adjustment structure disposed on the substrate. The phase adjustment structure includes a conductive structure, at least one semiconductor structure disposed between the signal transmission structure and the conductive structure, a first insulating layer disposed between the conductive structure and the at least one semiconductor structure, and at least one first bias voltage line electrically connected to the conductive structure. Orthogonal projections, on the substrate, of the signal transmission structure, the conductive structure and the at least one semiconductor structure overlap with one another. An orthogonal projection, on the substrate, of the first insulating layer is located at least in a region in which the orthogonal projections, on the substrate, of the conductive structure and the at least one semiconductor structure overlap.