Semiconductor Piercing Hole Reduces Resistance
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Solution Overview
Problem
Conventional semiconductor devices with trench configurations experience high resistance values due to the absence of an epitaxial layer in the semiconductor substrate, leading to inefficient electric current transmission.
Innovation Solution
The semiconductor device incorporates a piercing hole through the substrate with a source layer on the front surface and a drain layer inside the hole, electrically connected to a metal film on the back surface, using a TiN film as a barrier metal to prevent chemical reactions and ensure desirable thickness and quality, reducing resistance by eliminating insulating film interference.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If electric current passes through the semiconductor substrate twice (from source to substrate and from substrate to drain), then the current path is established, but the resistance value becomes high due to the absence of epitaxial layer in the substrate
Solution Approach 1:
The patent introduces a piercing hole that extends vertically through the semiconductor substrate from front surface to back surface, creating a three-dimensional current path. The drain layer is formed inside this piercing hole and electrically connected to the metal film on the back surface, allowing current to flow through the low-resistance drain layer and metal film rather than through the high-resistance substrate bulk, thus resolving the resistance issue while maintaining current transmission efficiency
Solution Approach 2:
The patent introduces a metal film as an intermediary component on the back surface of the substrate, which is electrically connected to the drain layer inside the piercing hole. This metal film serves as a low-resistance connection point that mediates between the drain layer and the external circuit, eliminating the need for current to pass through the high-resistance substrate twice and thereby reducing overall device resistance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly reduces the resistance value and improves device characteristics by eliminating capacitance buildup, allowing for efficient electric current transmission and achieving lower resistance compared to conventional devices.
Implementation Method 1
using a TiN film as a barrier metal to prevent chemical reactions and ensure desirable thickness and quality
Implementation Method 2
a drain layer formed inside of the piercing hole and electrically connected to the first metal film. The drain layer is formed on the front surface of the semiconductor substrate and includes a second metal film that makes contact with the front surface of the semiconductor substrate
Data Source
AI summary
The characteristic of the semiconductor device of this invention is that the device has a piercing hole 10 formed in the semiconductor layer to touch a first metal film 18, a insulating film 12 formed on the side wall of the piercing hole 10, a second metal film 13 disposed on the first metal film 18 at the bottom of the piercing hole 10 where the insulating film 12 has not been formed and on the semiconductor layer, a barrier metal film 14 formed on the insulating film 12 in the piercing hole 10 and on the first metal film 18, and a wiring layer 15 formed inside the piercing hole 10 through the barrier metal film 14.