Semiconductor Pillar Array Layout for Boundary Uniformity
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Solution Overview
Problem
The manufacturing process of semiconductor chips often results in non-uniformity of pillar structures near the boundary of the array compared to the central region, leading to differences in pattern density and potential loading effects that can cause defects and reduce yield.
Innovation Solution
The introduction of dummy pillar structures with increased laterally protruding portions, positioned between the high and low pattern density regions, helps to minimize pattern non-uniformity and loading effects by increasing contact area with the underlying structure, thereby improving the uniformity of pillar structures and reducing the risk of collapse during manufacturing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If pillar structures are formed as an array on the semiconductor chip, then the functionality and performance of the chip are improved, but non-uniformity occurs between pillar structures in the central region and those near the boundary
Solution Approach 1:
The patent applies local quality by introducing dummy pillar structures specifically at the boundary regions where pattern density transitions from high to low. These dummy structures have different configurations (different numbers of laterally protruding portions) compared to the central region pillar structures, creating localized modifications that compensate for the non-uniformity caused by pattern density variation at the boundaries.
Solution Approach 2:
The dummy pillar structures serve as intermediaries between the high pattern density central region and the low pattern density boundary regions. By positioning these dummy structures at the transition zones, they mediate the loading effects and pattern density variations, providing a gradual transition that reduces the abrupt changes and improves overall uniformity of the pillar structures.
2Manufacturing precision
If dummy pillar structures are introduced to improve uniformity, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The patent employs parameter changes by systematically varying the number of laterally protruding portions of the dummy pillar structures based on their position and the local pattern density. The first dummy pillar structures have a different number of protruding portions compared to the second dummy pillar structures, allowing optimization of each region's uniformity requirements while managing the overall device complexity.
Data Source
AI summary
A semiconductor chip and a manufacturing method thereof are provided. The semiconductor chip includes: an array of pillar structures, disposed on a front surface of the semiconductor chip, and respectively including a ground pillar and multiple working pillars laterally spaced apart from and substantially parallel with a line portion of the ground pillar; and dummy pillar structures, disposed on the front surface of the semiconductor chip and laterally surrounding the pillar structures. Active devices formed inside the semiconductor chip are electrically connected to the working pillar. The ground pillars of the pillar structures and the dummy pillar structures are electrically connected to form a current pathway on the front surface of the semiconductor chip.