Semiconductor Memory Pillars With Varying Diameters
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Solution Overview
Problem
The manufacturing process of 3D semiconductor memory devices often results in defects due to increased density of channel layers, which complicates the integration and reliability of these devices.
Innovation Solution
The semiconductor memory device design includes pillars with varying diameters and arrangements, with each row having progressively larger diameters towards the center, and interlayer insulating layers and conductive patterns that are alternately stacked, allowing for controlled gas flow and reduced impurity concentration during the manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the disposition density of channel layers is increased to improve the degree of integration, then the degree of integration is improved, but various defects are caused during manufacturing process
Solution Approach 1:
The patent applies local quality by varying the diameter of pillars based on their position in the array. Pillars closer to the center have larger diameters while those at the edges have smaller diameters. This non-uniform structure optimizes gas flow distribution during manufacturing processes, ensuring adequate velocity throughout the structure and reducing defects while maintaining high integration density.
2Ease of manufacture
If uniform pillar arrangement is used, then manufacturing is simplified, but gas velocity reduction and impurity concentration occur during processing
Solution Approach 1:
The patent implements asymmetry by deliberately creating non-uniform pillar diameters in a systematic pattern. Rather than using identical pillars throughout, the structure employs progressively larger diameters toward the center, creating an asymmetric distribution that compensates for gas flow velocity reduction and prevents impurity accumulation during manufacturing processes.
3Volume of moving object
If pillar diameters are uniformly small, then device size is reduced, but gas flow velocity is excessively reduced causing process failures
Solution Approach 1:
The patent applies parameter changes by systematically varying the pillar diameter parameter throughout the structure. Instead of maintaining a constant small diameter, the pillar size parameter is adjusted based on position, with larger diameters in central regions where gas flow velocity is naturally lower. This parameter optimization maintains adequate gas velocity for successful manufacturing processes while keeping the overall device compact.
Data Source
AI summary
A semiconductor memory device may include: a first group of pillars having diameters which are gradually increased toward the a first side; and interlayer insulating layers and conductive patterns surrounding the pillars of the first group, the interlayer insulating layers and conductive patterns being alternately stacked.