Semiconductor Pillar with Moisture Barrier and Dielectric Isolation
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Solution Overview
Problem
Conventional semiconductor structures face challenges with parasitic inductance and inefficient heat dissipation due to wire-bonding, and require a reduced number of metal layers while preventing moisture seepage to avoid short circuits.
Innovation Solution
A semiconductor structure with multiple metal layers, including a conductive pillar directly on one of the layers, a dielectric layer for electrical isolation, and a moisture barrier surrounding the periphery to prevent moisture ingress.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If wire-bonding is used to provide electrical connections, then ease of manufacture is improved, but parasitic inductance increases and heat dissipation efficiency deteriorates
Solution Approach 1:
The patent extracts and eliminates the wire-bonding interconnect structure from the semiconductor device. Instead of using separate wire bonds for electrical connections, the invention integrates the interconnect function directly into the semiconductor substrate through conductive paths formed within the substrate material itself, thereby removing the source of parasitic inductance while maintaining ease of manufacture through standard substrate fabrication processes
Solution Approach 2:
The patent replaces the mechanical wire-bonding system with an integrated conductive path system embedded in the substrate. This substitution eliminates the need for physical wire attachments and replaces them with conductive traces formed through the substrate, reducing mechanical complexity and parasitic effects while improving thermal coupling between the active region and heat sink
2Power
If multiple metal layers are used to route signals, then current-handling capability is improved, but device complexity and feature size increase
Solution Approach 1:
The patent transitions from a planar two-dimensional metal layer routing approach to a three-dimensional approach utilizing vertical conductive paths through the substrate. By routing signals vertically through the substrate thickness rather than requiring multiple horizontal metal layers, the invention achieves high current-handling capability while reducing lateral feature sizes and overall device complexity
Solution Approach 2:
The patent creates conductive structures that simultaneously serve multiple functions: electrical signal routing, thermal conduction paths, and mechanical support. This multi-functionality eliminates the need for separate dedicated thermal vias and signal traces, reducing the number of required metal layers and simplifying the overall device structure while maintaining high current-handling capability
3Power
If the upper-most metal layer is made thick to improve current handling, then current-handling capability is improved, but the layer cannot be used for signal routing under the pillar
Solution Approach 1:
The patent segments the conductive structures into functionally distinct regions: thick conductive regions for current handling and thermal management, and thinner routed regions for signal transmission. This segmentation allows different portions of the interconnect system to be optimized for their specific functions, with thick vertical paths providing current handling capability while separate routed paths maintain signal routing versatility
4Reliability
If moisture barrier is added to prevent moisture seepage, then reliability is improved, but device complexity increases
Solution Approach 1:
The patent merges the moisture barrier function with existing structural layers in the semiconductor device. Rather than adding a separate dedicated moisture barrier layer, the invention incorporates moisture-blocking properties into the substrate material or existing encapsulation layers, achieving reliable moisture protection while avoiding additional device complexity from separate barrier components
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces parasitic inductance, enhances heat dissipation, and minimizes the number of metal layers, improving current-handling capability and preventing short circuits by effectively isolating the conductive pillar from moisture.
Implementation Method 1
The pillar 109 provides a thermal dissipation path and electrical ground through the third metal layer 108
Implementation Method 2
A dielectric layer is selectively disposed between the metal layer and the conductive pillar, where the dielectric layer electrically isolates the second trace from the pillar
Implementation Method 3
A moisture barrier surrounds the semiconductor devices along a periphery of the semiconductor structure, and extends from the substrate through the dielectric layer to the conductive pillar
Data Source
AI summary
A semiconductor structure includes multiple semiconductor devices on a substrate and a metal layer disposed over the semiconductor devices, the metal layer comprising at least a first trace and a second trace. A conductive pillar is disposed directly on and in electrical contact with the first trace of the metal layer, and a dielectric layer is selectively disposed between the metal layer and the conductive pillar, where the dielectric layer electrically isolates the second trace from the pillar. A moisture barrier surrounds the semiconductor devices around a periphery of the semiconductor structure, and extends from the substrate through the dielectric layer to the conductive pillar.