Semiconductor pillar support structure for high-aspect-ratio electrodes
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Solution Overview
Problem
Semiconductor devices with high-aspect-ratio pillar-shaped lower electrodes face issues with insufficient support film strength, leading to potential detachment of lower electrodes from support films, especially when the aspect ratio increases.
Innovation Solution
The semiconductor device employs a dual-beam support structure where the first beam with a thinner portion and a thicker second portion is positioned intermediate to the lower electrodes, enhancing contact area and preventing twisting, while the second beam supports the upper ends, ensuring robust attachment and maintaining capacitor capacity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the aspect ratio of the lower electrodes is increased, then the capacitor capacity is improved, but the support film strength becomes insufficient causing lower electrode detachment
Solution Approach 1:
The support structure is divided into multiple segments: a first support film and a second support film positioned at different heights. This segmentation allows each support film to independently provide reinforcement at critical locations, preventing detachment while accommodating high aspect ratio electrodes for increased capacitor capacity.
Solution Approach 2:
The first support film acts as an intermediary element between the lower electrode and the substrate, providing mechanical reinforcement. The second support film serves as an additional intermediary at a higher position, creating a distributed support system that prevents detachment without limiting electrode height.
2Strength
If the support film thickness is increased to prevent detachment, then the support strength is improved, but the twisting of lower electrodes is not sufficiently reduced
Solution Approach 1:
The support function is segmented into two distinct support films at different positions. This segmentation provides both vertical support (preventing detachment) and lateral constraint (reducing twisting), as each support film contributes to different aspects of stability.
Solution Approach 2:
The solution moves from a single-plane support approach to a multi-level three-dimensional support structure. By positioning support films at different heights (Z-dimension), the structure provides comprehensive restraint against both detachment and twisting movements.
Data Source
AI summary
The semiconductor storage device includes a lower electrode that are vertically extended from a semiconductor substrate, a beam including a first portion extending in a horizontal direction to support the lower electrode and a second portion that is vertically extended along the exterior wall of the electrode from the first portion.