Power Semiconductor Contact Pin Joining via Laser Welding
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Solution Overview
Problem
The conventional production of power semiconductor arrangements is cumbersome due to the manual connection of electrically conductive contact pins to a circuit carrier, which increases production costs, and existing connection techniques like sintering or diffusion soldering are not suitable for joining rivets to the substrate without risking damage or requiring additional expensive soldering steps.
Innovation Solution
A method involving a dielectric insulation carrier with a metallization layer, where semiconductor chips and contact pins are joined using diffusion soldering or sintering, and the contact pins are directly connected to the metallization layer using various welding techniques such as beam welding, spin welding, ultrasonic welding, or resistance welding, allowing for automated placement and reduced costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional manual connection of contact pins to circuit carrier is used, then connection reliability is maintained, but production cost increases and productivity decreases
Solution Approach 1:
The patent replaces manual mechanical insertion and soldering of contact pins with an automated laser welding system. The laser welding process enables direct fusion of contact pin material with the metallization layer without requiring manual operations or additional soldering steps, thereby increasing productivity while maintaining connection reliability.
Solution Approach 2:
The invention utilizes the phase transition of metal material during laser welding, where the contact pin material and metallization layer are locally melted and fused together. This phase transition enables direct metallurgical bonding, eliminating the need for separate soldering processes and reducing manufacturing complexity.
2Strength
If sintering or diffusion soldering is used to join rivets to substrate, then connection strength is improved, but rivets are crushed due to high pressures required
Solution Approach 1:
The patent replaces pressure-based mechanical joining methods (sintering and diffusion soldering) with laser welding. The laser welding process uses concentrated thermal energy to fuse contact pin material directly with the metallization layer without applying high mechanical pressure, thereby achieving strong connections without crushing the rivets.
Solution Approach 2:
The invention changes the fundamental parameter of the joining process from pressure-driven (sintering/diffusion soldering) to heat-driven (laser welding). By controlling laser power, focal point, and scanning speed, the process achieves metallurgical bonding through localized melting and fusion without the high pressures that would damage the rivets.
3Reliability
If additional soldering steps are added to join contact pins, then connection reliability is improved, but production cost and process complexity increase
Solution Approach 1:
The patent merges the connection of contact pins to the substrate directly into the laser welding process used for joining semiconductor chips. The same laser welding system and process parameters are used to fuse both contact pin material and semiconductor chip material to the metallization layer in a unified process, eliminating the need for separate soldering steps and reducing overall process complexity.
Solution Approach 2:
The laser welding system is designed to perform multiple functions: joining semiconductor chips to the substrate and connecting contact pins to the metallization layer. This multi-functional approach allows a single process to achieve multiple connection tasks, reducing the number of process steps while maintaining connection reliability through consistent welding parameters.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables efficient, automated production of power semiconductor arrangements with reduced costs by allowing for direct physical contact between the contact pin material and the metallization layer, enhancing mechanical stability and reducing the need for additional soldering steps, thus improving the overall production efficiency.
Implementation Method 1
the connection layer is produced by diffusion soldering or by sintering
Implementation Method 2
the connection layer is produced by diffusion soldering or by sintering
Implementation Method 3
beam welding, spin welding, ultrasonic welding, or resistance welding
Implementation Method 4
beam welding, spin welding, ultrasonic welding, or resistance welding
Implementation Method 5
beam welding, spin welding, ultrasonic welding, or resistance welding
Implementation Method 6
beam welding, spin welding, ultrasonic welding, or resistance welding
Data Source
AI summary
In a method for producing a power semiconductor arrangement, a dielectric insulation carrier with a top side and a top metallization layer arranged on the top side are provided. Also provided are a semiconductor chip and at least one electrically conductive contact pin, each pin having a first end and an opposite second end. The semiconductor chip is sintered or diffussion soldered to the top metallization layer. Between the first end and the top metallization layer an electrically conductive connection is formed, in which electrically conductive connection material of the contact pin is in direct physical contact with the material of the top metallization layer.