Semiconductor Layer Planarization for Etch Protrusion Removal
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The semiconductor industry faces challenges in forming reliable semiconductor devices at increasingly smaller sizes due to the complexity and difficulty of fabrication processes, such as photolithography and etching, which affect the formation of reliable semiconductor devices.
Innovation Solution
A method involving multiple planarization processes using polishing solutions and cleaning agents to remove residues and protrusion structures, improving the yield of subsequent processes by creating a substantially flat surface, and using specific materials and processes like chemical mechanical polishing and chelating agents to effectively clean and prepare the semiconductor surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If feature sizes continue to decrease to increase functional density, then production efficiency increases and costs decrease, but fabrication processes become more difficult and reliability decreases
Solution Approach 1:
The fabrication process is divided into multiple sequential steps including etching, planarization, cleaning, and repeated cycles. Each step addresses specific challenges of small feature sizes, with planarization and cleaning steps specifically designed to handle residues and surface irregularities that become more prevalent at smaller dimensions
Solution Approach 2:
Planarization processes are performed before subsequent fabrication steps to pre-establish flat surfaces. Cleaning processes with chelating agents are conducted in advance to remove residues before they interfere with later etching or deposition steps, preventing defects before they occur
2Manufacturing precision
If multiple planarization and cleaning processes are performed to remove residues and create flat surfaces, then subsequent process yield improves, but process complexity increases
Solution Approach 1:
The planarization process serves multiple functions: it creates flat surfaces for subsequent lithography, removes protrusion structures formed during etching, and prepares surfaces for uniform material deposition. The cleaning process simultaneously removes organic residues, inorganic particles, and metal contaminants using chelating agents
Solution Approach 2:
The patent employs multiple cleaning solutions with different chemical compositions and pH levels to address various types of residues. Etching parameters are adjusted between cycles to selectively remove materials at different stages, with each cycle optimized for specific surface conditions
3Ease of manufacture
If etching processes are used to remove materials, then desired structures are formed, but protrusion structures and residues are created that require additional processing
Solution Approach 1:
The protrusion structures created during etching are not simply removed as waste but are utilized as self-aligned masks for subsequent etching steps. The residues from previous etching cycles serve as indicators for where additional planarization and cleaning are needed, guiding the multi-cycle process
Solution Approach 2:
Planarization processes act as intermediaries between etching steps, transforming the rough surfaces with protrusions into flat surfaces suitable for the next fabrication step. Cleaning solutions with chelating agents serve as intermediaries to bind and remove metal residues without damaging the underlying structures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the reliability and efficiency of semiconductor device formation by ensuring a flat surface, improving the yield of subsequent processes and preventing scratches, thereby addressing the challenges of smaller feature sizes and residue removal.
Implementation Method 1
performing a planarization process over the semiconductor layer to remove the protrusion structures so as to planarize a top surface of the semiconductor layer
Implementation Method 2
using specific materials and processes like chemical mechanical polishing and chelating agents to effectively clean and prepare the semiconductor surface
Data Source
AI summary
A method for forming a semiconductor device structure is provided. The method includes forming a first layer over a substrate. The method includes forming a stop layer over the first layer. The method includes forming a second layer over the stop layer. The second layer is in direct contact with the stop layer. The method includes partially removing the second layer. The method includes performing an etching process to partially remove the stop layer and an upper portion of the first layer, wherein protrusion structures are formed over a lower portion of the first layer after the etching process, and the protrusion structures include the stop layer and the upper portion of the first layer remaining after the etching process. The method includes removing the protrusion structures.