Semiconductor Process Plasma Treatment Defect Reduction
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Solution Overview
Problem
The formation of tiny defects on deposited semiconductor films due to residual radicals and ionic groups from organic precursors in CVD processes, which can impact the integrity and performance of integrated circuits.
Innovation Solution
A semiconductor process where plasma is continuously supplied during and after the deposition of a material layer using an organic precursor, followed by a purge and pump-down step, to minimize the formation of defects by eliminating dangling bonds and residual radicals on the film surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If plasma is used in CVD deposition with organic precursors, then material layers can be formed on substrates, but residual radicals and ionic groups form tiny defects on the deposited film surface
Solution Approach 1:
A plasma treatment step is performed immediately after deposition while the substrate remains in the chamber, treating the film surface before it can be exposed to ambient conditions. This preliminary action eliminates residual radicals and ionic groups that would otherwise form defects, thereby improving film quality without requiring additional handling steps
Solution Approach 2:
The residual radicals and ionic groups that cause defects are converted into beneficial effects through plasma treatment. The plasma process actively removes these harmful species and simultaneously passivates dangling bonds on the film surface, transforming the problematic post-deposition state into an improved film quality outcome
2Manufacturing precision
If the source for reactant gas is turned off to stop deposition, then the material layer reaches pre-determined thickness, but residual reactant gas continues to dissociate and react on the film surface forming defects
Solution Approach 1:
The plasma is maintained continuously throughout the deposition process and into the post-deposition treatment phase, ensuring that the film surface is constantly exposed to plasma conditions that prevent defect formation. This continuous plasma action extends beyond the point where deposition stops, maintaining film quality throughout the entire process sequence
Solution Approach 2:
The plasma treatment is initiated immediately after deposition reaches the target thickness, treating the film surface while still in the deposition chamber. This preliminary treatment prevents the formation of defects that would otherwise occur during the transition from deposition to chamber evacuation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This process effectively reduces the number of tiny defects and improves the quality and reliability of the deposited film by ensuring continuous plasma treatment after deposition, which can be easily integrated into existing fabrication processes.
Implementation Method 1
A plasma treatment is conducted immediately after depositing the material layer, wherein plasma is continuously supplied during depositing the material layer and the plasma treatment
Implementation Method 2
many material layers are formed through chemical vapor disposition (CVD) in the presence of plasma, which uses a precursor containing organic molecules as a reactant gas
Data Source
AI summary
A semiconductor process of the present invention is described as follows. A substrate is provided, and a material layer is deposited on the substrate using an organic precursor as a reactant gas. A plasma treatment is conducted immediately after depositing the material layer, wherein plasma is continuously supplied during depositing the material layer and the plasma treatment. A pump-down step is conducted.