Semiconductor Energy Storage via Plasma Charge Separation

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Solution Overview

Problem

Current energy storage devices, such as batteries, face limitations in energy density, charge/discharge speed, and lifespan due to ion motion and electrochemical reactions, while capacitors are constrained by device geometry, necessitating a more efficient method for high-density energy storage.

Innovation Solution

The development of semiconductor-based energy storage devices utilizing plasma formation and p-n junctions, where high permittivity and charge concentration are achieved through the application of strong electric fields and engineered semiconductor materials, allowing for increased energy density and improved charge storage capabilities.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Use of energy by moving object

If batteries are used for energy storage, then energy can be stored chemically, but the energy density is low and charge/discharge speed is slow due to ion motion

Engineering Contradiction:

Improveenergy densityVSAvoidcharge/discharge speed

Core Design Contradiction:

Use of energy by moving objectVSSpeed

Solution Approach 1:

The patent replaces the electrochemical reaction mechanism (involving ion motion) with a plasma-based charge separation mechanism in semiconductors. By using plasma formation and charge separation in semiconductor materials, the device achieves both high energy density and fast charge/discharge rates without relying on slow ion transport through electrolytes.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent changes the fundamental physical parameters of the energy storage mechanism by transitioning from ionic conduction in batteries to electronic conduction and plasma formation in semiconductors. This parameter change enables simultaneous achievement of high energy density and fast response times that are mutually exclusive in traditional battery systems.

Inventive Principle:

Principle #35Parameter changes

2Speed

If capacitors are used for energy storage, then charge/discharge speed is fast, but energy density is limited by device geometry

Engineering Contradiction:

Improvecharge/discharge speedVSAvoidenergy density

Core Design Contradiction:

SpeedVSUse of energy by moving object

Solution Approach 1:

The patent fundamentally changes the energy storage mechanism from conventional capacitor geometry-based storage to plasma-based charge separation in semiconductor materials. This allows the device to achieve capacitor-like fast charge/discharge speeds while overcoming geometric limitations through the plasma formation mechanism that enables much higher energy density.

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent employs composite semiconductor structures with specific bandgap properties to create a material system that combines the fast response characteristics of capacitors with the high energy density capability of battery-like storage, achieving both properties simultaneously through the plasma formation mechanism.

Inventive Principle:

Principle #40Composite materials

3Use of energy by moving object

If traditional batteries are used, then energy can be stored, but lifespan is limited due to high degradation rates from ion transport

Engineering Contradiction:

Improveenergy storage capacityVSAvoidlifespan

Core Design Contradiction:

Use of energy by moving objectVSReliability

Solution Approach 1:

The patent replaces the degradation-prone ionic transport mechanism with a plasma-based electronic charge separation mechanism in semiconductors. This substitution eliminates the high degradation rates associated with ion motion through electrolytes and electrode materials, thereby significantly extending device lifespan while maintaining energy storage capacity.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

These semiconductor devices achieve higher energy density, faster charge/discharge rates, and extended lifetimes compared to traditional batteries and capacitors, with the potential for low-cost fabrication and enhanced safety and durability.

Implementation Method 1

The low bandgap semiconductor becomes polarized as the electric field separates electrons and holes in the material by direct excitation by the E-field across the bandgap

Methodology Applied

Scientific EffectDirect excitation by electric field across bandgap: Photoelectric Effect

Implementation Method 2

In the plasma, the screening length increases with the charge density, thereby reducing the repulsion between the charges

Methodology Applied

Scientific EffectPlasma screening: Plasma

Implementation Method 3

charge separation in a p-n junction

Methodology Applied

Scientific EffectCharge separation at p-n junction: Photovoltaic Effect

Data Source

PatentUS9935208B2Energy storage device with large charge separation

Publication Date: 2018.04.03 THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIV

AI summary

High density energy storage in semiconductor devices is provided. There are two main aspects of the present approach. The first aspect is to provide high density energy storage in semiconductor devices based on formation of a plasma in the semiconductor. The second aspect is to provide high density energy storage based on charge separation in a p-n junction.