Semiconductor Plating Currents for Within-Die Co-Planarity

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Solution Overview

Problem

Existing electroplating techniques for semiconductor substrates face challenges in achieving uniform thickness and co-planarity due to variations in pattern density and local current density, leading to within-die nonuniformity and inefficiencies in batch processing.

Innovation Solution

A method involving a plating chamber with a liquid electrolyte, where a current comprising alternating cycles of forward plating current and reverse deplating current is applied to deposit and evenly distribute metal on substrates, maintaining the substrate in the same processing chamber and liquid bath to improve uniformity and efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If conventional electroplating is used with standard current density, then plating speed is maintained, but within-die uniformity deteriorates due to pattern density variations

Engineering Contradiction:

Improveplating speedVSAvoidwithin-die uniformity

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

The patent applies periodic forward and reverse current pulses during electroplating. The forward current deposits metal while the reverse current removes excess metal from high-density regions, achieving both uniform thickness and acceptable plating speed through time-dependent periodic action

Inventive Principle:

Principle #19Periodic action

Solution Approach 2:

The patent changes the electrical parameters by switching between forward and reverse current directions and adjusting current density magnitudes at different stages of plating, enabling control over both deposition rate and uniformity through dynamic parameter modification

Inventive Principle:

Principle #35Parameter changes

2Manufacturing precision

If separate plating and deplating chambers are used, then material uniformity is improved, but device complexity and processing time increase

Engineering Contradiction:

Improvematerial uniformityVSAvoidchamber configuration

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent combines plating and deplating functions into a single electroplating chamber by applying reverse current pulses during the same processing step, eliminating the need for separate deplating chambers and reducing system complexity while maintaining uniformity

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The electroplating chamber is made multi-functional by enabling it to perform both metal deposition (forward current) and metal removal (reverse current) operations, allowing a single chamber to accomplish what previously required multiple specialized chambers

Inventive Principle:

Principle #6Universality (Multi-functionality)

3Productivity

If high current density is applied to increase plating rate, then productivity improves, but thickness uniformity worsens due to current pooling in high-density regions

Engineering Contradiction:

Improveplating rateVSAvoidthickness uniformity

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

The patent uses periodic forward current pulses for metal deposition followed by reverse current pulses to remove excess metal from high-current-density regions, enabling high overall plating rates while maintaining thickness uniformity through time-dependent control

Inventive Principle:

Principle #19Periodic action

Solution Approach 2:

The patent applies reverse current (opposite direction) after forward current to remove excess metal that accumulated during high-rate plating, using the inverse action to correct the uniformity problems caused by high current density

Inventive Principle:

Principle #13The other way round (Inversion)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances within-die uniformity and co-planarity by incrementally correcting for differences in planarity during the plating process, improving processing speed and eliminating the need for separate chambers and chemistries.

Implementation Method 1

applying a current to the liquid in the plating chamber to deposit a metal on exposed portions of the substrate

Methodology Applied

Scientific EffectElectroplating: Electroplating

Implementation Method 2

electrochemical deposition of different metals

Methodology Applied

Scientific EffectElectrochemical deposition: Electrodeposition

Implementation Method 3

reverse deplating current to remove metal and achieve co-planarity

Methodology Applied

Scientific EffectDeplating: Electroplating

Data Source

PatentUS20250051951A1Plating and deplating currents for material co-planarity in semiconductor plating processes

Publication Date: 2025.02.13 APPLIED MATERIALS INC

AI summary

A method of plating substrates may include placing a substrate in a plating chamber comprising a liquid, and applying a current to the liquid in the plating chamber to deposit a metal on exposed portions of the substrate, where the current may include alternating cycles of a forward plating current and a reverse deplating current. To determine the current characteristics, a model of a substrate may be simulated during the plating process to generate data points that relate characteristics of the plating process and a pattern on the substrate to a range nonuniformity of material formed on the substrate during the plating process. Using information from the data points, values for the forward and reverse currents may be derived and provided to the plating chamber to execute the plating process.