Semiconductor Plating via Nickel Interlayer to Prevent Etch Pits
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Solution Overview
Problem
Conventional semiconductor device manufacturing methods result in performance variations due to etch pits formed on the emitter electrode during the plating process, leading to inconsistent characteristics in the final device.
Innovation Solution
A method involving the formation of a first metal film on the semiconductor substrate, followed by a second metal film with nickel as the main component, which enhances the oxidation rate of the reducing agent in the plating bath, allowing for continuous precipitation of the plated film without the need for etching or zincating treatments, thereby preventing etch pit formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional plating process with etching and zincating treatments is used, then plated film can be formed on emitter electrode, but etch pits are formed causing performance variations
Solution Approach 1:
A nickel-containing metal film is formed on the emitter electrode surface before the plating process to serve as a protective layer that prevents etch pit formation during subsequent plating operations, eliminating the need for etching and zincating treatments
Solution Approach 2:
The nickel-containing metal film acts as an intermediary layer between the emitter electrode and the plating bath, facilitating uniform plated film deposition while protecting the underlying electrode from harmful etching effects
2Reliability
If etching and zincating treatments are performed before plating, then plated film adhesion is improved, but manufacturing process complexity increases
Solution Approach 1:
The nickel-containing metal film formation step combines the functions of surface preparation and adhesion promotion into a single process step, eliminating the need for separate etching and zincating treatments while ensuring reliable plated film adhesion
3Manufacturing precision
If multiple pre-treatment steps (etching, zincating) are used, then plating quality is improved, but manufacturing time and cost increase
Solution Approach 1:
The nickel-containing metal film is formed in advance as a preparatory step that enables subsequent plating to proceed uniformly without requiring multiple intermediate treatment steps, thereby reducing total manufacturing time while maintaining plating quality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach ensures consistent semiconductor device characteristics by eliminating etch pits and reducing manufacturing steps, thereby enhancing reliability and reducing costs.
Implementation Method 1
a plated film is formed on the activated surface by a wet plating method in a plating bath that includes a reducing agent that is oxidized during plating
Implementation Method 2
a reducing agent that is oxidized during plating and that has a rate of oxidation
Implementation Method 3
forming a plated film on the activated surface by a wet plating method in a plating bath that includes a reducing agent that is oxidized during plating
Data Source
AI summary
A method of manufacturing a semiconductor device on a semiconductor substrate, includes the steps of forming a first metal film on a front surface of the semiconductor substrate; forming a second metal film on the surface of the first metal film; activating a surface of the second metal film to provide an activated surface; and forming a plated film on the activated surface by a wet plating method in a plating bath that includes a reducing agent that is oxidized during plating and that has a rate of oxidation, wherein the second metal film is a metal film mainly composed of a first substance that enhances the rate of oxidation of the reducing agent in the plating bath. Wet plating is preferably an electroless process.