Compound Semiconductor Plug High Concentration Dopant Layer

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Solution Overview

Problem

In compound semiconductor devices like AlGaN HEMTs, high ohmic contact resistance at the interface between the semiconductor area and the plug leads to non-uniform electrical characteristics due to carrier concentration lowering areas caused by airborne contaminants and bonding defects, making the device structure-dependent and unstable.

Innovation Solution

A compound semiconductor device with a compound semiconductor plug embedded in the semiconductor area, where the plug's side surface interface features a high concentration dopant layer with a dopant concentration higher than other areas, reducing ohmic contact resistance and stabilizing carrier concentration.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Object-affected harmful factors

If a compound semiconductor plug is formed to reduce ohmic contact resistance, then contact resistance decreases, but carrier concentration lowering areas are generated at the interface due to airborne contaminants and bonding defects

Engineering Contradiction:

Improveohmic contact resistanceVSAvoidcarrier concentration uniformity

Core Design Contradiction:

Object-affected harmful factorsVSReliability

Solution Approach 1:

The patent applies local quality by forming a high concentration dopant layer specifically at the side surface portion of the compound semiconductor plug that interfaces with the compound semiconductor area. This localized doping creates a high carrier concentration region precisely where carrier concentration lowering areas occur due to airborne contaminants and bonding defects, thereby compensating for the harmful effects at the critical interface region without affecting other areas of the plug

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The patent implements preliminary anti-action by pre-forming the high concentration dopant layer in the side surface portion of the compound semiconductor plug before the plug is fully integrated into the device. This preliminary doping creates a buffer of high carrier concentration that actively counteracts the harmful carrier concentration lowering effects of airborne contaminants and bonding defects before they can degrade the electrical characteristics, making the device less sensitive to interface defects

Inventive Principle:

Principle #9Preliminary anti-action

2Object-affected harmful factors

If a compound semiconductor plug is formed to reduce ohmic contact resistance, then contact resistance decreases, but device electrical characteristics become non-uniform due to fluctuation in maximum drain current

Engineering Contradiction:

Improveohmic contact resistanceVSAvoidelectrical characteristic uniformity

Core Design Contradiction:

Object-affected harmful factorsVSManufacturing precision

Solution Approach 1:

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The patent implements parameter changes by intentionally modifying the dopant concentration parameter in the side surface portion of the compound semiconductor plug. The high concentration dopant layer creates a localized region with significantly higher carrier concentration compared to other portions of the plug, thereby compensating for carrier concentration reductions at the interface and stabilizing electrical characteristics such as maximum drain current across different device batches

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration suppresses the generation of carrier concentration lowering areas, achieving low ohmic contact resistance and independent electrical characteristics from the plug structure, enhancing the device's reliability and performance.

Implementation Method 1

the compound semiconductor plug includes, in a side surface portion that is as an interface with the compound semiconductor area, a high concentration dopant layer containing a dopant whose concentration is higher than that of other portions

Methodology Applied

Scientific EffectDoping: Dopants

Data Source

PatentUS10804358B2Compound semiconductor device and method with high concentration dopant layer in regrown compound semiconductor

Publication Date: 2020.10.13 FUJITSU LTD

AI summary

A compound semiconductor device includes: a compound semiconductor area in which a compound semiconductor plug is embedded and formed; and an ohmic electrode provided on the compound semiconductor plug, wherein the compound semiconductor plug includes, in a side surface portion that is as an interface with the compound semiconductor area, a high concentration dopant layer containing a dopant whose concentration is higher than that of other portions.