Semiconductor Plug Fabrication Preventing EBR Arcing

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Solution Overview

Problem

Conventional semiconductor device fabrication methods often result in arcing failures in the edge bead removal (EBR) region due to defects in plug formation, leading to potential differences and reliability issues during the dry etch process.

Innovation Solution

A method that involves forming plugs and metal lines in both the die and EBR regions, followed by removing metal lines in the EBR region using a wet etch process to prevent arcing failures, employing etch solutions like nitric acid or sodium hydroxide depending on the metal type, and then using a dry etch process for contact hole formation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If a dry etch process using plasma etch device is performed to form contact holes, then contact holes can be precisely formed, but arcing failure occurs in the EBR region due to potential difference

Engineering Contradiction:

Improvecontact hole formation precisionVSAvoiddevice reliability

Core Design Contradiction:

Manufacturing precisionVSReliability

Solution Approach 1:

The patent applies preliminary action by removing metal lines in the EBR region before performing the dry etch process. This preventive measure eliminates the source of potential difference that would cause arcing failure during plasma etching, while still allowing precise contact hole formation in the die region where metal lines are retained

Inventive Principle:

Principle #10Preliminary action

2Stability of the object's composition

If metal lines are retained in the EBR region, then structural uniformity is maintained, but arcing failure occurs due to potential difference during plasma etching

Engineering Contradiction:

Improvestructural uniformityVSAvoidarcing failure

Core Design Contradiction:

Stability of the object's compositionVSObject-affected harmful factors

Solution Approach 1:

The patent applies local quality by differentiating the treatment of metal lines between the die region and EBR region. Metal lines are retained in the die region to maintain structural integrity, while selectively removed only in the EBR region to eliminate arcing hazards, creating localized structural differences based on functional requirements

Inventive Principle:

Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach prevents arcing phenomena and enhances semiconductor device reliability and production yield by maintaining uniformity and avoiding damage to inter-layer dielectric layers.

Implementation Method 1

removing metal lines in the EBR region using a wet etch process

Methodology Applied

Scientific EffectWet etching:

Implementation Method 2

forming a plurality of contact holes that expose the metal lines by selectively etching the inter-layer dielectric layer through a dry etch process using a plasma etch device

Methodology Applied

Scientific EffectPlasma etching: Plasma

Data Source

PatentUS8268726B2Method for fabricating semiconductor device

Publication Date: 2012.09.18 MIMIRIP LLC

AI summary

A method for fabricating a semiconductor device includes forming a plurality of plugs over a die region and an edge bead removal (EBR) region of a wafer, forming metal lines coupled to the plugs, removing the metal lines in the EBR region, forming an inter-layer dielectric layer over the wafer, and forming a plurality of contact holes that expose the metal lines by selectively etching the inter-layer dielectric layer through a dry etch process using a plasma etch device.