Semiconductor Device Plug Metal Side Wall Protection
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Solution Overview
Problem
Conventional semiconductor device technologies fail to prevent film peeling during dicing and abnormal discharge during etching, especially when metal plugs are integrated, leading to damage and surface burning issues.
Innovation Solution
A semiconductor device design featuring a first insulating film with separation grooves, side walls made of plug metal films, and a second insulating passivation film covering these side walls, along with a manufacturing method that includes etching back the plug metal film and using a photosensitive polyimide resist film as a mask for dry etching, to prevent film peeling and abnormal discharge.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If separation grooves are provided in the inter-layer insulating film to prevent film peeling during dicing, then film peeling is prevented, but abnormal discharge occurs on the side wall of the plug metal film during etching
Solution Approach 1:
A resin film is introduced as an intermediary layer between the plug metal film and the etching environment. This resin film covers the side wall of the plug metal film in the separation groove, acting as a protective mediator that prevents direct exposure to etching plasma, thereby eliminating abnormal discharge while maintaining the separation groove structure for peeling prevention
Solution Approach 2:
The side wall of the plug metal film is covered with a resin film before the etching process. This preliminary protective action prevents the harmful effect of abnormal discharge from occurring during subsequent etching operations, while the separation groove structure remains intact to prevent film peeling
2Reliability
If the plug metal film is deposited to completely fill the contact hole, then good electrical connection is achieved, but the side wall of the plug metal film in the separation groove becomes exposed and susceptible to abnormal discharge
Solution Approach 1:
The resin film is selectively applied to cover only the side wall of the plug metal film in the separation groove region, while leaving the top surface and contact hole filling intact. This local modification preserves the electrical connection function while providing targeted protection against abnormal discharge at the vulnerable side wall location
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively prevents film peeling and abnormal discharge during dicing and etching, ensuring the integrity of the inter-layer insulating films and preventing surface damage, thereby enhancing the reliability of semiconductor chip production.
Implementation Method 1
a photosensitive polyimide resist film as a mask for dry etching
Implementation Method 2
depositing a plug metal film on the inter-layer insulating film
Data Source
AI summary
A semiconductor device has a semiconductor substrate provided with a scribe region and an IC region. A first insulating film is disposed on the semiconductor substrate across the scribe region and the IC region. At least one separation groove is provided in the first insulating film in the scribe region. Side walls made of a plug metal film are formed only on respective lateral walls of the separation groove so that the plug metal film on the lateral walls does not extend out of the separation groove and does not exist on an upper surface of the first insulating film. A second insulating film covers at least the side walls formed on the respective lateral walls of the separation groove so that the side walls are disposed under the second insulating film.