Semiconductor Polishing Slurry with Sulfonate and Amine Compounds
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Solution Overview
Problem
The challenge in fabricating integrated circuit devices is to suppress dishing and erosion on the polishing target surface of semiconductor layers while maintaining sufficient polishing selectivity between the semiconductor layer and the polishing-preventive mask, especially when polishing high-mobility channel layers.
Innovation Solution
A method involving the use of a slurry composition containing a sulfonate compound and a terminal amine group-containing compound, applied to the semiconductor layer, which includes forming a polishing stop layer and selectively polishing the semiconductor layer to minimize step differences and dishing, using the mask pattern as a polishing stop layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional polishing slurry is used on semiconductor layers, then polishing can be performed, but dishing and erosion occur on the polishing target surface
Solution Approach 1:
The patent modifies the chemical composition parameters of the polishing slurry by incorporating specific compounds (sulfonate compound, carboxylate compound, or phosphate compound) that chemically interact with the semiconductor layer material. This chemical modification changes the polishing mechanism from purely mechanical to chemically-assisted mechanical polishing, thereby reducing dishing and erosion while maintaining surface flatness
Solution Approach 2:
The patent creates a composite polishing slurry system that combines abrasive particles with specific chemical compounds (sulfonate, carboxylate, or phosphate compounds). This composite formulation allows the slurry to simultaneously provide mechanical abrasion for material removal and chemical action for selective etching, resulting in reduced dishing and erosion on the semiconductor layer surface
2Manufacturing precision
If polishing is performed to remove unwanted portions, then the semiconductor layer can be planarized, but erosion of unwanted portions occurs
Solution Approach 1:
The patent applies polishing compounds with different local properties - the sulfonate, carboxylate, or phosphate compounds provide selective chemical activity that varies by location. These compounds preferentially react with unwanted portions of the semiconductor layer while being less active on desired regions, enabling precise planarization with minimal erosion of unwanted portions
3Reliability
If polishing selectivity between semiconductor layer and mask is increased, then mask protection is improved, but polishing rate of semiconductor layer decreases
Solution Approach 1:
The patent introduces chemical compounds (sulfonate, carboxylate, or phosphate compounds) as intermediaries that mediate between the abrasive particles and the semiconductor layer. These intermediaries selectively enhance the removal of semiconductor material while being inhibited by the mask material, thereby maintaining high polishing selectivity and mask protection without significantly reducing the overall polishing rate
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces dishing and step differences, ensuring precise control over the polishing process and maintaining the integrity of the semiconductor layer, thereby enhancing the performance and reliability of the integrated circuit device.
Implementation Method 1
the slurry composition including a compound composition and polishing particles. The compound composition may include a sulfonate compound and a terminal amine group-containing compound
Data Source
AI summary
A method of fabricating an integrated circuit device may include forming a polishing stop layer and a semiconductor layer on a substrate, and selectively polishing the semiconductor layer from a surface which simultaneously exposes the polishing stop layer and the semiconductor layer, by using a slurry composition including a compound composition and polishing particles. The compound composition may include a sulfonate compound and a terminal amine group-including compound.