Semiconductor Layer Polishing Markers for Precise Thickness Control
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Solution Overview
Problem
The existing polishing processes for semiconductor layers lack precise control over the finish thickness, leading to inconsistencies and difficulties in achieving the desired thickness during the manufacturing of semiconductor elements.
Innovation Solution
A manufacturing method that includes forming semiconductor layers on a sapphire substrate, peeling them off using laser light, and polishing them while using a polishing indication part, such as holes or cutout parts, to control the finish thickness by exposing these features to the polished surface, allowing for precise control of the polishing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional polishing process is used, then the semiconductor layer surface can be flattened, but the finish thickness cannot be precisely controlled
Solution Approach 1:
The polishing indication part is formed in advance within the semiconductor layer at a predetermined depth from the first surface. This preliminary structure serves as a visual marker that indicates when the polishing process has removed the desired amount of material, enabling precise control of the finish thickness without requiring complex real-time measurement systems.
Solution Approach 2:
The polishing indication part creates a visible change in the semiconductor layer structure during polishing. When the polishing process reaches the indication part, there is a detectable visual or optical change that signals the endpoint of polishing, allowing operators to precisely determine when to stop the process to achieve the desired finish thickness.
2Shape
If polishing is extended to ensure sufficient thickness removal, then surface flatness is improved, but excessive polishing occurs leading to thickness variation
Solution Approach 1:
The polishing indication part provides immediate visual feedback during the polishing process. As the polishing head removes material from the semiconductor layer, the operator can continuously observe when the indication part becomes visible, providing real-time feedback that signals the precise endpoint. This feedback mechanism prevents both insufficient polishing (which would leave the surface non-flat) and excessive polishing (which would cause thickness variation).
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables precise control over the finish thickness of semiconductor layers, preventing excessive polishing and ensuring consistent thickness across multiple layers, thereby improving the manufacturing efficiency and quality of semiconductor elements.
Implementation Method 1
peeling off the plurality of semiconductor layers from the sapphire substrate by irradiating the first surfaces of the plurality of semiconductor layers with laser light
Data Source
Figure 1
Figure 2(A)~2(B)
Figure 3~4
AI summary
A manufacturing method of a semiconductor element includes forming a plurality of semiconductor layers (12) on a sapphire substrate (11), each of the semiconductor layers (12) having a first surface (12s) on the sapphire substrate (11) side and a second surface (12t) on the opposite side, joining the second surfaces (12t) of the plurality of semiconductor layers (12) to a retention member (15) via an adhesive member (14), peeling off the plurality of semiconductor layers (12) from the sapphire substrate (11) by irradiating the first surfaces (12s) of the plurality of semiconductor layers (12) with laser light, and polishing the first surfaces (12s) of the plurality of semiconductor layers (12). At least one semiconductor layer (12) among the plurality of semiconductor layers (12) includes a polishing indication part (12h) extending from the second surface (12t) toward the first surface (12s). The polishing is executed until the polishing indication part (12h) is exposed to the polished surface.