Semiconductor Power Device Dual Carrier Current Density
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Solution Overview
Problem
The existing semiconductor power devices face challenges in increasing output current density, particularly due to limitations in the single carrier current formation between the source and drain regions.
Innovation Solution
The semiconductor power device incorporates a metal oxide semiconductor field effect transistor (MOSFET) region and a collector region forming an insulated gate bipolar transistor (IGBT) structure, enabling the formation of both electron and hole carrier currents, which significantly increases the output current density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If a groove MOS transistor structure is adopted to reduce area, then the device area is reduced and current density is increased, but the output current density of single carrier cannot be continuously increased
Solution Approach 1:
The patent merges MOSFET and IGBT structures into a single device, combining the advantages of both: the MOSFET's low on-resistance and the IGBT's high breakdown voltage and dual-carrier conduction capability. This allows the device to achieve high current density without increasing area, as the dual-carrier conduction in the IGBT portion provides additional current carrying capacity beyond what a MOSFET alone could provide.
Solution Approach 2:
The device structure is designed to perform multiple functions: the MOSFET portion handles low-voltage, high-current operations with low on-resistance, while the IGBT portion handles high-voltage operations with dual-carrier conduction. This multi-functionality allows a single device to operate across a wide range of conditions and continuously increase output current density by utilizing both electron and hole carriers.
2Area of moving object
If the device area is reduced using vertical current channel structure, then area is reduced, but the output current density reaches a saturation point
Solution Approach 1:
The patent changes the conduction mechanism parameter from single-carrier (electrons only in MOSFET) to dual-carrier (both electrons and holes in IGBT) conduction. This fundamental parameter change allows the device to exceed the current density saturation point achieved by conventional MOSFETs, as hole injection from the collector region provides additional current carrying capacity that scales with voltage and area.
3Device complexity
If single carrier current is used in MOSFET, then device structure is simple, but output current density cannot be continuously increased
Solution Approach 1:
The patent combines MOSFET and IGBT structures, merging the simple gate control of MOSFET with the dual-carrier conduction of IGBT. The resulting device maintains relatively simple manufacturing processes while achieving high current density through the synergistic combination of both device types in a single structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for a substantial increase in output current density by facilitating double carrier current flow, enhancing the device's performance in semiconductor integrated circuits.
Implementation Method 1
a gate structure configured to control turning on and off of the current channel
Implementation Method 2
the collector region and the MOSFET unit form an insulated gate bipolar transistor
Data Source
AI summary
Disclosed is a semiconductor power device, including a semiconductor substrate; a MOSFET region formed on the semiconductor substrate, where the MOSFET region includes at least one MOSFET unit; and at least one collector region located in the semiconductor substrate, where the collector region and the MOSFET unit form an insulated gate bipolar transistor.