Semiconductor Power Devices with Segmented Termination Rings
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Solution Overview
Problem
Existing semiconductor power devices face challenges in achieving high operating voltage and current density while requiring complex manufacturing processes.
Innovation Solution
A semiconductor power device is manufactured using a substrate with gate electrode structures, a floating well region, and a termination ring region, where the termination ring region is doped with impurities to create concentric ring sub-regions with increasing distances, optimizing the electric field distribution and simplifying the manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional manufacturing processes are used to achieve high breakdown voltage and high current density, then device performance is improved, but manufacturing complexity increases
Solution Approach 1:
The termination region is segmented into multiple concentric ring regions with different impurity concentrations. The first termination region has a first impurity concentration, the second termination region has a second impurity concentration higher than the first, and the third termination region has a third impurity concentration higher than the second. This segmentation allows each region to contribute differently to voltage distribution, achieving high breakdown voltage through progressive field control rather than requiring a single complex high-voltage structure.
Solution Approach 2:
Different regions of the semiconductor device are given different local properties through varying impurity concentrations. The gate electrode structures have specific doping profiles, the first termination region has lower impurity concentration for field control, the second termination region has intermediate concentration for voltage support, and the third termination region has highest concentration for current handling. This local quality differentiation enables the device to achieve high breakdown voltage and current density simultaneously without requiring uniformly complex manufacturing throughout.
2Productivity
If more cells are integrated in a unit area to achieve high current density, then device performance is improved, but manufacturing precision requirements increase
Solution Approach 1:
The device structure is divided into distinct functional zones: an active region containing multiple integrated cells for current density, and a termination region with concentric rings for voltage control. The gate electrode structures extend from the active region into the termination region, creating natural boundaries that simplify alignment requirements. This segmentation allows high cell integration in the active region without requiring equally high precision in the termination region, as the zones can be formed with different precision requirements suited to their functions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables the production of semiconductor power devices with high breakdown voltage and high current density through simplified processes, improving electric characteristics and integration density.
Implementation Method 1
The termination ring region is doped with impurities to create concentric ring sub-regions with increasing distances, optimizing the electric field distribution and simplifying the manufacturing process
Data Source
AI summary
A semiconductor power device includes a substrate, a plurality of gate electrode structures, a floating well region and a termination ring region. The substrate has a first region and a second region. A plurality of gate electrode structures is formed on the substrate, each of the gate electrode structures extends from the first region to the second region and includes a first gate electrode, a second gate electrode and a connecting portion, the first and second gate electrodes extend in a first direction, and the connecting portion connects end portions of the first and second gate electrodes to each other. The floating well region is doped with impurities between the gate electrode structures in the first region of the substrate, and the floating well region has a first impurity concentration and a first depth. The termination ring region is doped with impurities in the second region of the substrate, is spaced apart from the gate electrode structures, and has a ring shape surrounding the first region, and has the first impurity concentration and the first depth. The semiconductor power device may have a high breakdown voltage.