Semiconductor Power Module Package With On-Chip Temperature Sensor

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Solution Overview

Problem

High-voltage semiconductor power modules generate excessive heat, affecting their stability and reliability, and require precise temperature measurement for thermal stabilization, which existing technologies fail to address effectively.

Innovation Solution

A semiconductor power module package with a temperature sensor, such as a thermistor, mounted directly on the semiconductor power chip, electrically connected via wiring patterns and leads, allowing for precise temperature measurement and improved heat dissipation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If a temperature sensor is mounted directly on the semiconductor chip, then temperature measurement precision is improved, but device complexity increases

Engineering Contradiction:
Improvetemperature measurement precisionVSAvoiddevice complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The temperature sensor is merged with the semiconductor chip by mounting it directly on the chip surface, integrating the sensing function into the power module package. This combination enables direct temperature measurement at the heat source without requiring separate external sensing systems, thereby improving measurement precision while the integration approach manages the added complexity.

Inventive Principle:
Principle #5Merging (Combining)

2Power

If high voltage is applied to the semiconductor chip, then power output is improved, but heat generation increases

Engineering Contradiction:
Improvepower outputVSAvoidheat generation
Core Design Contradiction:
PowerVSTemperature

Solution Approach 1:

The temperature sensor mounted on the semiconductor chip provides real-time temperature feedback to the control system. This feedback mechanism enables the system to monitor heat generation caused by high voltage operation and respond appropriately by adjusting operating parameters or shutting down to prevent thermal damage, thus allowing high power output while managing heat generation risks.

Inventive Principle:
Principle #23Feedback

3Power

If the semiconductor power module operates at high voltage, then power capability is improved, but reliability deteriorates due to thermal effects

Engineering Contradiction:
Improvepower capabilityVSAvoidreliability
Core Design Contradiction:
PowerVSReliability

Solution Approach 1:

The integrated temperature sensor provides continuous thermal feedback that enables real-time monitoring and control of operating conditions. This feedback system allows the module to maintain high power capability while responding to thermal stress by adjusting operations or initiating protective shutdowns, thereby preventing thermal runaway and maintaining reliability under high voltage stress.

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The temperature sensor is positioned to detect thermal conditions before they reach critical levels. By mounting the sensor directly on the chip, the system can identify rising temperatures early and take preventive actions such as reducing power output or activating cooling mechanisms before thermal damage occurs, thus cushioning against reliability deterioration.

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables accurate temperature monitoring and rapid response to high temperatures, enhancing the stability and reliability of semiconductor power modules by allowing immediate power cutoff when high temperatures are reached, thus preventing damage.

Implementation Method 1

The temperature sensor may include a thermistor

Methodology Applied
Scientific EffectThermistor: Thermistor

Implementation Method 2

the first and second wiring patterns are contacted to first and second electrode terminals of the temperature sensor, respectively, through a soldering process

Methodology Applied
Scientific EffectSoldering: Soldering

Data Source

PatentUS8013431B2Semiconductor power module package with temperature sensor mounted thereon and method of fabricating the same
Publication Date: 2011.09.06 SEMICON COMPONENTS IND LLC
  • US8013431B2 patent drawing
  • US8013431B2 patent drawing
  • US8013431B2 patent drawing

AI summary

Provided are a semiconductor power module package and a method of fabricating the same. The semiconductor power module package includes a substrate, semiconductor chips arranged on a top surface of the substrate, and a temperature sensor mounted on a top surface of at least one of the semiconductor chips. The semiconductor chips and the temperature sensor are electrically connected to each other through leads. A sealing material covers the top surface of the substrate, the semiconductor chips, and the temperature sensor except for portions of the leads and a bottom surface of the substrate. The temperature sensor may include a thermistor, and the thermistor may include first and second electrode terminals connected to corresponding leads of the leads. A first wiring pattern may be in contact with the first electrode terminal, and a second wiring pattern may be in contact with the second electrode terminal.