Semiconductor Power Module Thermal Management via Dielectric Substrate
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Power semiconductor modules operating at high electrical voltages and currents face challenges with overheating and damage from temperature changes, as well as requirements for high dielectric and insulation strength.
Innovation Solution
A method involving a semiconductor chip and a metal plate connected by a dielectric compound, with a conductive connection established through a substrate unit featuring a flat dielectric insulation carrier, and the metal plate structured with through-openings to create electrical connections, replacing traditional bonding wires and enhancing thermal management.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional bonding wires are used to connect semiconductor chips to metal plates, then electrical connections are established, but the module becomes vulnerable to damage from temperature changes and thermal stress
Solution Approach 1:
The invention removes the vulnerable bonding wires from the module structure and replaces them with direct electrical connections through conductive paste and metallization layers, eliminating the weak link that causes failure under thermal stress
Solution Approach 2:
The invention uses a composite structure combining dielectric compound, conductive paste, and metallization layers to create a robust connection system that withstands thermal expansion and contraction better than traditional bonding wires
2Power
If high electrical voltages and currents are used for power semiconductor operation, then higher power output is achieved, but overheating and thermal management challenges increase
Solution Approach 1:
The invention introduces a metal plate with high thermal conductivity as an intermediary heat sink between the semiconductor chip and the cooling system, efficiently conducting heat away from the power components
Solution Approach 2:
The metal plate serves multiple functions simultaneously: providing electrical connection, acting as a heat sink for thermal management, and serving as a structural support element for the module
3Reliability
If high dielectric strength and insulation strength are required for high voltage operation, then electrical isolation is improved, but the complexity of the module structure increases
Solution Approach 1:
The invention combines the dielectric compound and metallization layers into an integrated substrate structure that provides both electrical isolation and mechanical support, reducing the number of separate components needed
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach prevents damage from temperature fluctuations, improves thermal shock resistance, and increases the thermal capacity of the module, ensuring reliable operation and efficient cooling.
Implementation Method 1
a dielectric compound connecting the first semiconductor chip and the metal plate in a materially bonded manner
Implementation Method 2
increases the thermal capacity of the module, ensuring reliable operation and efficient cooling
Data Source
Figure 1~4
Figure 5~8
Figure 9~12
AI summary
One aspect concerns a process in which a first opening is created in an assembly comprising a first semiconductor chip (1), a metal plate (3), and a dielectric connecting compound (4) that metallurgically connects the first semiconductor chip (1) and the metal plate (3). In this opening, a first load electrode (11) of the first semiconductor chip (1) is exposed in a first section (40). Furthermore, a first electrically conductive connection (31) is created, which contacts the first load electrode (11) exposed in the first section (40) of the first opening and electrically connects it to the metal plate (3).