Semiconductor Power Rail Structure for Voltage Drop Reduction
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In semiconductor devices, voltage drops along conductive paths can cause malfunctions in electronic elements farther from the voltage source, as they experience greater voltage changes than those closer to the source, leading to instability and potential failures.
Innovation Solution
The implementation of a semiconductor device with multiple metal layers and conductors that include first and second power rails extending in a specific direction, with a conductor integral to the first power rails and vias connecting additional power rails across the array of active electronic elements, ensuring stable voltage distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If electronic elements are connected to voltage source through common conductive path, then device complexity is reduced, but voltage drop causes malfunctions in elements farther from voltage source
Solution Approach 1:
The power rail is segmented into multiple sections with intermediate connection points. Conductors extend from intermediate connection points of first power rails to connect to second power rails, creating distributed voltage distribution points that reduce voltage drop along the conductive path while maintaining a relatively simple overall structure.
2Ease of manufacture
If power rails extend longitudinally in first direction, then voltage distribution is simplified, but voltage drop increases for elements farther from voltage source
Solution Approach 1:
Second power rails act as intermediary conductors that receive voltage from first power rails at intermediate connection points and distribute it to electronic elements. This intermediary structure reduces the effective length of voltage delivery paths, minimizing voltage drop while maintaining the simple longitudinal layout for ease of manufacture.
3Reliability
If conductor is integral with first power rails and spans in second direction, then voltage distribution is improved, but device complexity increases
Solution Approach 1:
The conductor is merged with the first power rails at intermediate connection points, forming an integrated conductive network. This combining of elements improves voltage distribution consistency by creating direct electrical pathways while the integration reduces the number of discrete components, thereby not significantly increasing device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration minimizes instantaneous voltage drops and prevents malfunctions by ensuring consistent voltage supply to all electronic elements, enhancing the reliability and performance of semiconductor devices.
Implementation Method 1
a first conductor which is integral with each of the first power rails at first ends of the first power rails, respectively, and spans the first power rails in a second direction
Implementation Method 2
a first set of vias electrically connecting the third power rail to the first power rails
Data Source
AI summary
A semiconductor device includes a semiconductor substrate and a plurality of metal layers above the semiconductor substrate. A first of the metal layers includes a plurality of first power rails which extend in a first direction and provide a first voltage, a plurality of second power rails which extend in the first direction and provide a second voltage, and a first conductor which is integral with one end of each of the first power rails and extends in a second direction. The first direction is perpendicular to the second direction. The first voltage is one of a ground voltage and a power source voltage and the second voltage is the other voltage.