Semiconductor Power Unit Resin Flow Control

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Solution Overview

Problem

During the manufacturing of semiconductor devices, resin confluence between semiconductor elements leads to resin voids and delamination, especially when radiators are present, making it difficult to control air flow and exacerbating resin void and delamination issues.

Innovation Solution

Incorporating a joint structure between power units and strategically positioning semiconductor elements to stem resin flow, preventing confluence between semiconductor elements by directing resin flow into predetermined gaps, thereby suppressing resin void and delamination.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If resin is injected from one side of the power units during molding, then the semiconductor device can be manufactured efficiently, but resin confluence occurs between semiconductor elements leading to resin voids and delamination

Engineering Contradiction:
Improvemanufacturing efficiencyVSAvoidresin void and delamination
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

A resin flow control structure (partition wall) is introduced as an intermediary element between adjacent power units to control and separate resin flow paths. This partition wall prevents resin from flowing directly between semiconductor elements in adjacent power units, thereby avoiding resin confluence and the resulting voids and delamination, while still allowing efficient resin injection from one side during molding

Inventive Principle:
Principle #24Intermediary (Mediator)

2Temperature

If radiators are provided on both surfaces of the semiconductor element, then heat dissipation is improved, but air flow through the resin confluent location becomes difficult leading to increased resin void and delamination

Engineering Contradiction:
Improveheat dissipationVSAvoidresin void and delamination
Core Design Contradiction:
TemperatureVSReliability

Solution Approach 1:

The resin flow control structure acts as an intermediary that prevents resin confluence before it can trap air between the radiators and the substrate. By controlling the resin flow path, the partition wall eliminates the formation of resin confluent locations where air would be trapped, thus preventing resin voids and delamination while maintaining the heat dissipation function of the radiators

Inventive Principle:
Principle #24Intermediary (Mediator)

3Adaptability or versatility

If multiple power units are placed in parallel in a second direction, then device functionality is enhanced, but resin flows between adjacent power units and into gaps between semiconductor elements causing resin confluence

Engineering Contradiction:
Improvedevice functionalityVSAvoidresin confluence control
Core Design Contradiction:
Adaptability or versatilityVSManufacturing precision

Solution Approach 1:

The molding space is segmented into separate regions for each power unit by introducing resin flow control structures (partition walls). These partition walls create independent resin flow paths for each power unit, preventing resin from flowing between adjacent power units and into the gaps between semiconductor elements, thereby maintaining manufacturing precision while allowing multiple power units to be placed in parallel

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Resin flow control structures serve as intermediary elements that separate and control the resin flow between adjacent power units. These structures prevent the harmful interaction of resin flow between different power unit regions, ensuring that each power unit is molded independently without resin confluence affecting the overall manufacturing precision

Inventive Principle:
Principle #24Intermediary (Mediator)

Data Source

PatentEP2824696B1Semiconductor device and method of manufacture thereof
Publication Date: 2021.05.05 TOYOTA JIDOSHA KK
  • EP2824696B1 patent drawingFigure 1
  • EP2824696B1 patent drawingFigure 2
  • EP2824696B1 patent drawingFigure 3

AI summary

The present invention relates to a semiconductor device and a manufacturing method thereof. The semiconductor device has a plurality of power units placed in parallel in a predetermined direction, and integrally sealed with resin, wherein each of the power units includes a plurality of semiconductor elements placed on a metal plate having predetermined gaps with each other. Two of the power units placed adjacent to each other in the predetermined direction have a passage therebetween through which the resin flows injected during manufacturing. The semiconductor elements of each of the two power units include a near-sided semiconductor element that is closer to an inlet of the resin among the two semiconductor elements having the predetermined gap therebetween. A structure is positioned on a passage and downstream in a resin flow direction relative to a predetermined position that corresponds to end parts of the near-sided semiconductor elements such that the structure prevents the resin from flowing downstream in a resin flow direction, the end parts being on a side opposite to another side closer to the inlet.