Semiconductor Power Wire Layout for Lower Voltage Drop
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Solution Overview
Problem
Current semiconductor devices face challenges in reducing size and power transmission path length, leading to increased voltage drop and complexity in manufacturing processes.
Innovation Solution
The semiconductor device incorporates a support member with a substrate insulation layer and a power wire positioned between separating insulators, simplifying the structure and reducing the power transmission path, and uses a self-alignment process to form the power wire, thereby minimizing voltage drop and enhancing manufacturing efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If the power wire is positioned closer to the active region to reduce the power transmission path length, then voltage drop is reduced, but the device structure becomes more complex and manufacturing becomes more difficult
Solution Approach 1:
The power wire is repositioned from a planar configuration to a three-dimensional configuration by placing it between separating insulators that extend vertically from the substrate. This vertical positioning allows the power wire to be closer to the active region in the vertical dimension while maintaining a simplified horizontal layout, thus reducing voltage drop without increasing planar complexity.
Solution Approach 2:
The substrate insulation layer is segmented into multiple separating insulators that are distributed between adjacent active regions. These separating insulators create discrete spaces where power wires can be positioned independently, allowing for optimized power delivery to each active region while maintaining overall structural simplicity through modular repetition.
2Volume of moving object
If the substrate insulation layer is removed to reduce device size, then the device footprint is reduced, but manufacturing precision requirements increase
Solution Approach 1:
The separating insulators are formed and positioned on the substrate before the active regions are fabricated. This preliminary positioning establishes precise reference structures that guide subsequent manufacturing steps, ensuring that when the substrate insulation layer is removed, the remaining components maintain accurate alignment without requiring ultra-precise manufacturing tolerances.
Solution Approach 2:
The separating insulators serve as intermediary structures that mediate between the substrate and the active regions. They provide a stable reference framework that maintains spatial relationships between components even when the substrate insulation layer is removed, thereby reducing manufacturing precision requirements while enabling device size reduction.
3Loss of energy
If additional layers are added to support the power wire structure, then voltage drop is reduced, but the manufacturing process becomes more complex
Solution Approach 1:
The separating insulators perform multiple functions simultaneously: they provide electrical isolation between adjacent active regions, serve as structural supports for positioning the power wires, and act as spacers that define the vertical spacing between layers. This multi-functionality allows voltage drop reduction without adding dedicated support structures, thereby simplifying the manufacturing process.
Solution Approach 2:
The functions of electrical insulation, mechanical support, and spatial positioning are merged into a single component - the separating insulator. By combining these functions, the design achieves effective power delivery (reduced voltage drop) without requiring separate layers for each function, thus maintaining manufacturing process simplicity.
Data Source
AI summary
A semiconductor device may include a support member, an active region, source and drain regions, and a gate electrode. The support member may include a substrate insulation layer including separating insulators and a power wire disposed at a space between the separating insulators. The active region may be disposed on the power wire. The source and drain regions may be positioned adjacent to the active region. The gate electrode may be disposed on the active region.