Semiconductor Memory Power-Up Signal Gating Under Voltage Variation
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Solution Overview
Problem
Existing semiconductor memory apparatuses face issues in generating a stable power-up signal due to variations in temperature and transistor characteristics, leading to abnormal operation when the power supply level is not at the required level for normal operation.
Innovation Solution
The apparatus includes a first power-up signal generator that activates based on a comparison between the power supply voltage and a set voltage level, a second power-up signal generator that activates with a preset delay time based on another voltage comparison, and a third generator that outputs a signal only when both are stable, ensuring reliable power-up signals.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a power-up signal generator is configured with fixed resistor and transistor ratios, then the circuit structure is simple, but the power-up signal cannot be generated normally due to variations in temperature and transistor characteristics
Solution Approach 1:
The patent applies dynamics by making the resistor values adjustable rather than fixed. The first and second resistors can be dynamically changed to different resistance values based on operating conditions, allowing the voltage division ratio to adapt to temperature variations and transistor characteristic changes, thus ensuring reliable power-up signal generation across different environments
Solution Approach 2:
The patent changes the parameters of the resistors from fixed values to adjustable values. By varying the resistance values of the first and second resistors, the voltage division ratio can be optimized for different operating conditions, resolving the issue where fixed ratios fail to generate proper power-up signals under varying temperature and transistor characteristics
2Productivity
If the power supply voltage level is not monitored before operation, then the apparatus can start immediately, but the semiconductor memory apparatus may operate abnormally
Solution Approach 1:
The patent applies preliminary action by generating a power-up signal before the main operation begins. This power-up signal is generated based on the voltage division comparison and is used to initialize or prepare the semiconductor memory apparatus, ensuring that the system is ready for normal operation only when the power supply voltage reaches appropriate levels
Solution Approach 2:
The patent implements feedback by using the voltage division output to control the power-up signal generation. The third resistor and fourth resistor form a feedback network that monitors the divided voltage and adjusts the power-up signal accordingly, creating a closed-loop system that ensures the power supply voltage is at the required level before allowing normal operation
Data Source
AI summary
An apparatus for generating a power-up signal of a semiconductor memory apparatus includes a first power-up signal generator that generates a first power-up signal to be activated on the basis of a comparison between a power supply voltage level supplied to the semiconductor memory apparatus and a first set voltage level, and a second power-up signal generator that generates a second power-up signal to be activated with a predetermined delay time on the basis of a comparison between the power supply voltage level and a second set voltage level.