Semiconductor Device Carrier Mobility via Pre-Amorphous Implantation
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Solution Overview
Problem
Existing methods for forming stressor regions in semiconductor devices, such as MOSFETs, are not entirely satisfactory in enhancing carrier mobility and device performance, particularly as devices are scaled down in technology nodes.
Innovation Solution
A method involving pre-amorphous implantation, dummy spacer formation, stress film deposition, annealing, and subsequent removal processes to create dislocations and strained source/drain features, which enhance carrier mobility without significant cost addition to the manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If existing approaches to forming stressor regions are used, then device fabrication can proceed with standard processes, but carrier mobility and device performance are not sufficiently enhanced
Solution Approach 1:
The method performs pre-amorphous implantation and forms dummy spacers before the main stressor region formation process. This preliminary action prepares the substrate in advance, enabling subsequent selective epitaxial growth to create strained source/drain regions more effectively, thereby enhancing carrier mobility without significantly complicating the overall manufacturing process
Solution Approach 2:
Dummy spacers are introduced as intermediary structures during the fabrication process. These spacers serve as temporary placeholders that define regions for subsequent etching and epitaxial growth, enabling precise formation of stressor regions while maintaining processability. The dummy spacers are later removed after serving their mediating function
2Productivity
If geometry size is decreased through scaling down, then production efficiency increases and costs decrease, but processing complexity increases
Solution Approach 1:
The method changes the physical and chemical parameters of the source/drain regions by performing pre-amorphous implantation to create damaged regions, then using selective epitaxial growth to form strained semiconductor material. This parameter change enables the formation of stressor regions at scaled dimensions while maintaining manufacturability through controlled material properties rather than relying solely on geometric scaling
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method improves carrier mobility and stress within the channel region, enhancing device performance while maintaining manufacturing efficiency and reducing costs.
Implementation Method 1
performing a pre-amorphous implantation process on the substrate
Implementation Method 2
performing an annealing process on the substrate and the stress film
Implementation Method 3
forming a stress film over the substrate
Data Source
AI summary
A semiconductor device having dislocations and a method of fabricating the semiconductor device is disclosed. The exemplary semiconductor device and method for fabricating the semiconductor device enhance carrier mobility. The method includes providing a substrate having an isolation feature therein and two gate stacks overlying the substrate, wherein one of the gate stacks is atop the isolation feature. The method further includes performing a pre-amorphous implantation process on the substrate. The method further includes forming spacers adjoining sidewalls of the gate stacks, wherein at least one of the spacers extends beyond an edge the isolation feature. The method further includes forming a stress film over the substrate. The method also includes performing an annealing process on the substrate and the stress film.