Semiconductor Device Manufacturing Method Using Pre-Sintering Layers
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Solution Overview
Problem
Conventional methods for manufacturing thermoelectric conversion modules often result in positional deviation or inclination of thermoelectric elements due to solder re-melting during the bonding process, leading to manufacturing inaccuracies and potential breakage of semiconductor elements.
Innovation Solution
A semiconductor device manufacturing method involving the use of pre-sintering layers on both surfaces of the semiconductor element, which are simultaneously heated to bond the element to electrodes on insulating substrates, eliminating the need for additional adhesives and molds and preventing re-melting, thus maintaining positional accuracy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If solder is used for bonding thermoelectric elements to insulating substrates, then strong electrical connection is achieved, but positional deviation or inclination occurs due to solder re-melting during subsequent heating processes
Solution Approach 1:
The bonding process is divided into two distinct stages: first, temporary adhesion using a pre-sintering layer that allows positioning; second, permanent bonding through simultaneous heating of both pre-sintering layers. This segmentation prevents the solder from being re-melted during intermediate heating steps, eliminating positional deviation while maintaining strong final bonds.
Solution Approach 2:
A pre-sintering layer is applied to both surfaces of the thermoelectric element before mounting. This preliminary layer provides temporary adhesion and positioning stability during the manufacturing process, and is only removed or transformed during the final simultaneous heating step, ensuring positional accuracy is maintained throughout intermediate processes.
2Manufacturing precision
If additional adhesives or fixing materials are used to prevent positional deviation, then manufacturing precision is improved, but device complexity and material costs increase
Solution Approach 1:
The pre-sintering layer serves multiple functions simultaneously: it provides temporary adhesion to hold the thermoelectric element in position, acts as a bonding material during final heating, and eliminates the need for separate adhesives or fixing materials. This multi-functionality reduces device complexity while maintaining manufacturing precision.
Solution Approach 2:
The pre-sintering layer on the thermoelectric element itself provides the positioning and bonding functionality, eliminating the need for external adhesives or fixing materials. The layer serves the element's own positioning needs through its inherent properties, simplifying the overall manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively suppresses positional deviation and inclination of semiconductor elements, enhances manufacturing precision, and reduces the risk of element breakage, while also being economically advantageous by eliminating the need for additional fixing materials.
Implementation Method 1
a step C of, after the step B, simultaneously heating the first pre-sintering layer and the second pre-sintering layer, to bond the semiconductor element to the first electrode and the second electrode
Data Source
AI summary
Provided is a semiconductor device manufacturing method which can suppress the occurrence of positional deviation or inclination of a semiconductor element when the semiconductor element is fixed so as to be sandwiched-between two insulating substrates. The semiconductor device manufacturing method includes: obtaining a laminated body in which a semiconductor element is temporarily adhered on a first electrode formed on a first insulating substrate with a first pre-sintering layer sandwiched therebetween; temporarily adhering the semiconductor element on a second electrode formed on a second insulating substrate with a second pre-sintering layer sandwiched therebetween, the second pre-sintering layer being provided on a side opposite to the first pre-sintering layer, to obtain a semiconductor device precursor; and simultaneously heating the first pre-sintering layer and the second pre-sintering layer, to bond the semiconductor element to the first electrode and the second electrode.