Semiconductor Pre-Clean Vapor Chemistry for Oxide Removal
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Solution Overview
Problem
The semiconductor industry faces challenges in manufacturing due to the damage of dielectric and metal layers during the pre-clean process, leading to leakage and conductivity decay in semiconductor devices.
Innovation Solution
A method using alcohol base vapor and/or aldehyde base vapor as a reduction agent to remove oxide film residues without damaging metal layers, increasing conductivity and reducing leakage by forming carbon chains on the dielectric structure surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional pre-clean agents are used to remove oxide film residues, then cleaning effectiveness is improved, but damage to metal layers and dielectric structures increases
Solution Approach 1:
The patent changes the chemical parameters of the pre-clean agent by using organic peroxide compounds (such as tert-butyl hydroperoxide, mCPBA, or dicumyl peroxide) instead of conventional aggressive cleaners. These organic peroxides provide effective oxide removal through controlled oxidation reactions while being less damaging to metal layers and dielectric structures. The specific choice of organic peroxide compounds and their concentrations are optimized to achieve the right balance between cleaning effectiveness and material preservation.
Solution Approach 2:
The patent employs a disposable pre-clean agent (organic peroxide solution) that is applied, allowed to react briefly with oxide films, and then removed. The organic peroxide compounds act as single-use cleaning agents that decompose after performing their cleaning function, leaving minimal residue and avoiding the accumulation of harmful substances that could damage subsequent processing steps or device performance.
2Manufacturing precision
If aggressive cleaning methods are used to remove oxide residues, then purity of metal layers is improved, but conductivity of metal layers deteriorates
Solution Approach 1:
The patent changes the chemical aggressiveness parameter by substituting conventional strong oxidizing agents or acidic cleaners with organic peroxide compounds. These organic peroxides selectively remove oxide films through controlled decomposition and oxidation reactions, achieving high purity metal surfaces while maintaining the metallic integrity and conductivity. The mild yet effective nature of organic peroxides allows thorough oxide removal without the harsh conditions that would damage metal crystalline structures or induce defects reducing conductivity.
3Manufacturing precision
If conventional pre-clean processes are used, then oxide film removal is achieved, but leakage in semiconductor devices increases
Solution Approach 1:
The patent employs organic peroxide compounds as disposable, single-use cleaning agents that decompose after removing oxide films. This decomposition leaves minimal to no residue on the dielectric surfaces, preventing the formation of conductive contamination paths that would cause leakage. The transient nature of organic peroxide action ensures thorough oxide removal while maintaining the electrical isolation properties of dielectric layers, thereby reducing device leakage.
Solution Approach 2:
The patent changes the chemical composition parameter from conventional inorganic cleaners to organic peroxide-based cleaners. This chemical parameter change results in a cleaning mechanism that is effective at removing oxide films while being gentler on dielectric materials. The organic peroxides decompose into benign byproducts (water, oxygen, and organic fragments) that do not create the ionic contamination or surface degradation associated with conventional cleaners, thus preventing leakage paths in the final device.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Effectively removes oxide film residues from dielectric and metal layers, enhancing the conductivity of metal layers and reducing semiconductor device leakage without damaging them.
Implementation Method 1
a pre-clean operation is performed on the dielectric structure and the first metal layers by using an alcohol base vapor and/or an aldehyde base vapor as a reduction agent
Implementation Method 2
an amount of carbon chains on a surface of the dielectric structure is increased, thereby decreasing the leakage of the semiconductor device
Data Source
AI summary
A method for forming a semiconductor device, includes: forming a metal layer on a semiconductor substrate; forming a dielectric layer over the metal layer; etching a top portion of the dielectric layer; after etching the top portion of the dielectric layer, removing first mist from a bottom portion of the dielectric layer; removing the bottom portion of the dielectric layer to expose the metal layer; performing a pre-clean operation, using an alcohol base vapor or an aldehyde base vapor, on the dielectric layer and the metal layer; and forming a conductor extending through the dielectric layer and in contact with the metal layer.