Semiconductor Assembly Press Contact for High-Current Reliability

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Solution Overview

Problem

Existing bonding wires in semiconductor assemblies face limitations in load cycle durability, particularly with increasing current demands, affecting reliability.

Innovation Solution

A method involving materially bonding a semiconductor element's power contacts to a substrate and a molded metal body, using a metallic contacting element pressed via a dielectric pressing element to ensure large-area contact without additional connecting means, enhancing load cycle durability and reliability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If bonding wires are used to contact semiconductor elements, then the assembly is simple to manufacture, but the load cycle durability deteriorates with increasing current demands

Engineering Contradiction:

Improveease of manufactureVSAvoidload cycle durability

Core Design Contradiction:

Ease of manufactureVSReliability

Solution Approach 1:

The patent extracts the problematic bonding wire connection and replaces it with a direct metallic contacting element that bonds to the semiconductor element's power contact. This removes the weak link (bonding wire) while maintaining the simple manufacturing process through direct material bonding and pressing operations.

Inventive Principle:

Principle #2Taking out (Extraction)

Solution Approach 2:

The patent changes the contact method from wire bonding to direct material bonding with a metallic contacting element. This parameter change in the contacting mechanism significantly improves load cycle durability while maintaining ease of manufacture through established bonding and pressing processes.

Inventive Principle:

Principle #35Parameter changes

2Device complexity

If bonding wires are used to contact semiconductor elements, then the assembly process is simple, but the current-carrying capacity is insufficient for ever-larger currents

Engineering Contradiction:

Improvedevice complexityVSAvoidcurrent-carrying capacity

Core Design Contradiction:

Device complexityVSPower

Solution Approach 1:

The patent changes the contacting parameter from thin bonding wires to a metallic contacting element with substantially larger cross-sectional area. This parameter change directly increases current-carrying capacity while the element can be pressed into place using standard pressing equipment, maintaining relatively simple device architecture.

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent employs a composite structure where the metallic contacting element is pressed through a dielectric pressing element. This composite arrangement allows the metallic element to carry high currents while the dielectric element provides electrical insulation, achieving both high power capacity and safe operation without excessive device complexity.

Inventive Principle:

Principle #40Composite materials

3Reliability

If a metallic contacting element is pressed via a dielectric pressing element, then contact integrity under load changes and temperature fluctuations is maintained, but the manufacturing process becomes more complex

Engineering Contradiction:

Improvecontact integrityVSAvoidmanufacturing process complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent introduces a dielectric pressing element as an intermediary between the metallic contacting element and the semiconductor element. This intermediary maintains contact integrity under load and temperature variations while the entire assembly can be manufactured using standard pressing equipment, keeping the process relatively simple despite the added component.

Inventive Principle:

Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Improves load cycle durability and reliability of semiconductor assemblies by ensuring high current-carrying capacity and maintaining contact integrity under load changes and temperature fluctuations.

Implementation Method 1

pressing the metallic contacting element against the semiconductor element via a dielectric pressing element, wherein a force acting perpendicularly on the semiconductor element is transferred via the dielectric pressing element

Methodology Applied

Scientific EffectForce transfer: Force

Implementation Method 2

materially bonding a first power contact of the semiconductor element to a first metallization of the substrate and a second power contact of the semiconductor element

Methodology Applied

Scientific EffectMaterial bonding: Welding

Data Source

PatentUS20260005124A1Method for producing a semiconductor assembly comprising a semiconductor element and a substrate

Publication Date: 2026.01.01 SIEMENS AG

AI summary

In a method for producing a semiconductor assembly, a first power contact of a semiconductor element is materially bonded to a first metallization of a substrate, and a second power contact of the semiconductor element is materially bonded to a molded metal body, with the second power contact being arranged on a face of the semiconductor element facing away from the substrate. A metallic contacting element is contacted directly in a planar manner on the molded metal body for contacting the metallic contacting element to the second power contact via the molded metal body. The metallic contacting element is pressed against the semiconductor element via a dielectric pressing element, with a force acting perpendicularly on the semiconductor element being transferred via the dielectric pressing element.