Semiconductor Substrate Processing Pressure Control for 450mm Wafer Throughput
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Solution Overview
Problem
Large-diameter substrates in vertical heat treatment apparatuses lead to increased apparatus size and processing time, resulting in decreased throughput due to the need for larger receiving containers and reaction furnaces.
Innovation Solution
A substrate processing apparatus with a process chamber, first and second process gas supply units, a purge gas supply unit, flow rate control devices, an exhaust device, pressure detector, and pressure adjustor, which controls gas flow rates and pressures to maintain optimal conditions for efficient film formation and purging, thereby synchronizing gas supply and exhaust operations to prevent overshoot or undershoot.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the wafer diameter is increased from 300 mm to 450 mm, then the processing capacity per wafer is improved, but the apparatus size and processing time increase, resulting in decreased throughput
Solution Approach 1:
The patent divides the pressure control into multiple stages: initial pressure adjustment stage and constant pressure maintenance stage. The controller segments the processing phases (film formation, purging) and applies different control strategies to each, allowing optimized handling of large-diameter wafers without proportionally increasing overall processing time
Solution Approach 2:
The patent dynamically changes pressure parameters during the processing cycle. It transitions from variable pressure control during film formation to constant pressure maintenance during purging. The system adjusts gas flow rates and pressure levels based on the specific phase of processing, enabling efficient handling of 450 mm wafers while maintaining throughput
2Adaptability or versatility
If larger receiving containers and reaction furnaces are used for 450 mm wafers, then the substrate size capability is improved, but the apparatus size increases and processing time per cycle increases
Solution Approach 1:
The patent implements preliminary pressure adjustment before film formation begins. The controller pre-establishes the optimal pressure conditions for the upcoming process phase, ensuring that when gas supply starts, the system is already in the optimal state for efficient film deposition on large-diameter substrates
Solution Approach 2:
The patent employs feedback control where the controller continuously monitors pressure conditions and adjusts gas flow rates accordingly. During constant pressure maintenance, the system uses real-time pressure feedback to modulate gas supply, preventing overshoot and ensuring stable processing conditions for large wafers without extending cycle time
3Stability of the object's composition
If gas flow rates are increased to maintain pressure control, then the pressure stability is improved, but the risk of overshoot increases and processing precision deteriorates
Solution Approach 1:
The patent implements dynamic pressure control where the controller adjusts gas flow rates in real-time based on the processing phase and pressure conditions. During film formation, pressure is allowed to vary within controlled limits, while during purging, constant pressure maintenance is applied. This dynamic approach maintains stability without causing overshoot
Solution Approach 2:
The patent applies periodic control strategies by transitioning between different control modes at specific phases: initial pressure adjustment, film formation with controlled pressure variation, purging with constant pressure maintenance. This periodic switching between control strategies ensures both stability and precision throughout the cycle
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces processing time per cycle and improves throughput by ensuring precise pressure control and synchronized gas flow, maintaining efficiency even with larger substrates.
Implementation Method 1
a pressure detector installed at the exhaust device to detect an exhaust pressure
Implementation Method 2
a pressure adjustor configured to adjust an inside pressure of the process chamber
Implementation Method 3
a flow rate control device configured to control flow rates of the first process gas, the second process gas and the purge gas
Data Source
AI summary
A method of manufacturing a semiconductor device includes: (a) supplying a first process gas from a first process gas supply unit into a process chamber via a flow rate control device to form a film on a substrate; (b) transmitting a signal representing an exhaust pressure detected by a pressure detector to a controller after the first process gas is supplied into the process chamber; (c) controlling a pressure adjustor and the flow rate control device once the signal is received by the controller such that the exhaust pressure reaches a predetermined pressure; (d) supplying a purge gas from a purge gas supply unit into the process chamber to purge an inside atmosphere after forming the first film; and (e) supplying a second process gas from a second process gas supply unit into the process chamber via the flow rate control device to form a second film.