Semiconductor Probe Multi-Layer Oxide Structure
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Solution Overview
Problem
Conventional probe cards used in semiconductor processing are prone to deformation due to repeated usage, leading to a short lifespan.
Innovation Solution
A robust probe structure with a multi-interposed-layer design, featuring conductive metal layers separated by oxide layers and vias, and a protective layer for anti-oxidation and isolation, along with a twisted structure for enhanced strength and flexibility, is developed to withstand repeated usage and thermal expansion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Duration of action of stationary object
If conventional probe structure is used, then manufacturing is simple, but probe deforms due to repeated usage leading to short lifespan
Solution Approach 1:
The probe structure is divided into multiple metal layers (first metal layer, second metal layer, third metal layer) separated by oxide layers, with conductive vias connecting them. This segmented multi-layer construction distributes mechanical stress across multiple interfaces, preventing deformation and extending probe lifespan during repeated usage.
Solution Approach 2:
The probe employs a composite structure combining multiple metal layers (e.g., copper, aluminum, tungsten, gold, or silver) with oxide layers and conductive vias. This composite material approach creates a robust structure that resists deformation while maintaining electrical conductivity, directly addressing the lifespan issue.
2Strength
If multi-interposed-layer structure is added for strength, then probe rigidity improves, but manufacturing complexity increases
Solution Approach 1:
The multi-layer structure segments the probe into distinct functional layers (conductive metal layers for electrical performance, oxide layers for insulation and mechanical support). Each layer can be optimized independently for its specific function while contributing to overall strength, making the complex structure more manageable in manufacturing.
Solution Approach 2:
The patent specifies that metal layers have different thicknesses (first metal layer: 1-5 μm, second metal layer: 5-10 μm, third metal layer: 10-20 μm) to optimize both strength and electrical properties. By carefully controlling these dimensional parameters, the structure achieves high strength while maintaining manufacturability through standardized fabrication processes.
3Reliability
If protective layer is added for anti-oxidation, then probe durability improves, but device complexity increases
Solution Approach 1:
The oxide layers positioned between metal layers create an inert protective environment that prevents oxidation of the conductive metal layers. These oxide layers act as barriers isolating the metals from oxidizing conditions, significantly improving probe durability without requiring external protective atmospheres or coatings.
Data Source
AI summary
A semiconductor probe includes multiple metal layers. An oxide layer is disposed between each adjacent pair of the metal layer. A via for connecting at least one pair of the metal layers. At least one protection layer 150 is disposed at an external side of the metal layer.