Semiconductor Probe for Non-Destructive Quantum Battery Testing
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Solution Overview
Problem
Conventional methods cannot directly evaluate the electric characteristics of the charge layer in the production process of quantum batteries without damaging the insulating coating, which is crucial for assessing the performance and identifying defects in these novel all-solid secondary batteries.
Innovation Solution
A semiconductor probe is designed with a conductive electrode, a metal oxide semiconductor layer, and a charge layer that has undergone photoexcitation structural change to form energy levels in the band gap, allowing for direct contact and evaluation of the charge layer without damaging the insulating coating, using a support body to control contact pressure and facilitate efficient measurement.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional measurement methods are used to evaluate the charge layer, then the insulating coating is damaged, but accurate electric characteristics cannot be obtained
Solution Approach 1:
The patent introduces a semiconductor probe as an intermediary device that includes a charge layer with insulating coating identical to the object being measured. This probe serves as a mediator that allows measurement of electric characteristics without directly contacting and damaging the insulating coating of the actual charge layer. The probe's charge layer acts as a buffer that reproduces the measurement conditions while protecting the original structure.
Solution Approach 2:
The patent creates a copy of the charge layer structure (including the insulating coating) within the semiconductor probe. This copied structure allows the measurement process to be performed on the probe rather than directly on the original charge layer, thereby obtaining accurate electric characteristics without damaging the original insulating coating.
2Productivity
If the charge layer is evaluated during the production process, then production efficiency is improved, but the measurement method must be non-destructive
Solution Approach 1:
The semiconductor probe is designed to be self-contained with all necessary measurement components (electrodes, charge layer with insulating coating) integrated into a single device. The probe can be brought into contact with the charge layer being measured and perform the evaluation autonomously, enabling in-line measurement during the production process without requiring complex external measurement systems or destructive sampling.
3Ease of operation
If direct contact measurement is performed on the charge layer, then measurement simplicity is improved, but the insulating coating integrity is compromised
Solution Approach 1:
The semiconductor probe acts as an intermediary that simplifies the measurement operation while maintaining insulating coating integrity. The probe's charge layer with insulating coating serves as a protective interface that allows direct contact measurement to be performed on the probe rather than on the original charge layer, thereby achieving measurement simplicity without compromising the original insulating coating.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the accurate and non-destructive evaluation of electric characteristics, facilitating the identification of defects and improving the production efficiency of quantum batteries by allowing for real-time assessment of charge/discharge functions during the manufacturing process.
Implementation Method 1
a charge layer having an n-type metal oxide semiconductor covered with an insulating material and undergone a photoexcitation structural change by ultraviolet irradiation to form an energy level in a band gap so as to trap electrons
Data Source
Figure 1
Figure 2
Figure 3(A)~3(B)
AI summary
There are provided a testing device and a testing method of a quantum battery by a semiconductor probe capable of evaluating electric characteristics of a charge layer in the middle of a production process of the quantum battery without damaging the charge layer. On a semiconductor probe 50 constituted by stacking an electrode 54 and a metal oxide semiconductor 56 on a support body 52, and a probe charge layer 58 is formed of the same material as that of the quantum battery and irradiated with ultraviolet rays. Forming the probe charge layer 58 of the same material as that of the quantum battery on the semiconductor probe 50 enables evaluation without damaging the charge layer of the quantum battery. The testing device and the testing method are provided which measure the charge/discharge characteristics of a charge layer 18 in the middle of producing the quantum battery by a voltmeter 64 and a constant current source 62 or a discharge resistor 66 by using the semiconductor probe 50 including the probe charge layer 58.