Semiconductor Substrate Inspection Using Segmented Probe Arrays

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Solution Overview

Problem

Conventional temperature inspection methods for semiconductor substrates require a significant waiting time for temperature stabilization due to the cooling effect of probes when brought into contact with a heated substrate, leading to prolonged measurement times.

Innovation Solution

The method involves using a smaller number of probes for initial measurements that require precise temperature control, followed by a larger number of probes for subsequent measurements with less stringent temperature accuracy, allowing for faster stabilization and reduced waiting times while maintaining measurement accuracy.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If a large number of probes are brought into contact with the heated semiconductor substrate for inspection, then multiple characteristics can be measured simultaneously, but the substrate temperature decreases significantly causing prolonged waiting time for temperature stabilization

Engineering Contradiction:
Improvemeasurement efficiencyVSAvoidwaiting time for temperature stabilization
Core Design Contradiction:
ProductivityVSLoss of time

Solution Approach 1:

The inspection process is divided into two distinct phases: a first inspection using a first plurality of probes with a first current, and a second inspection using a second plurality of probes with a second current. This segmentation allows optimization of each phase independently - the first phase uses fewer probes to minimize temperature drop, while the second phase uses more probes to gather comprehensive data, thus resolving the contradiction between measurement efficiency and temperature stabilization time.

Inventive Principle:
Principle #1Segmentation

2Ease of operation

If probes are cooled by heat exchange with the atmosphere at the waiting position, then the probes are ready for inspection, but the semiconductor substrate temperature decreases when probes make contact

Engineering Contradiction:
Improveprobe readinessVSAvoidsubstrate temperature stability
Core Design Contradiction:
Ease of operationVSTemperature

Solution Approach 1:

The patent changes the electrical current parameter as a function of inspection phase. A first current is applied during the first inspection phase, and a second current is applied during the second inspection phase. This parameter change allows the system to adapt to different temperature conditions - the first current compensates for the temperature drop caused by probe contact in the first phase, while the second current is used when the substrate has been reheated, thus resolving the contradiction between probe readiness and temperature stability.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables the accurate measurement of semiconductor characteristics in a shorter time compared to conventional methods, reducing overall waiting time and improving efficiency in semiconductor device manufacturing.

Implementation Method 1

heating the semiconductor substrate

Methodology Applied
Scientific EffectHeating: Heating

Implementation Method 2

they are cooled by heat exchange with the atmosphere

Methodology Applied
Scientific EffectHeat exchange: Heat Exchanger

Data Source

PatentUS9753082B2Inspection method for semiconductor substrate, manufacturing method of semiconductor device and inspection device for semiconductor substrate
Publication Date: 2017.09.05 DENSO CORP
  • US9753082B2 patent drawing
  • US9753082B2 patent drawing
  • US9753082B2 patent drawing

AI summary

A manufacturing method of a semiconductor device is provided with an inspecting of a semiconductor substrate by an inspection method, the method including heating the semiconductor substrate, measuring first and second characteristics. The measuring of a first characteristic is performed by bringing a plurality of probes into contact with the heated semiconductor substrate and making a first electric current flow in the semiconductor substrate. The measuring of a second characteristic is performed, after the measuring of the first characteristic, by bringing a plurality of probes into contact with the heated semiconductor substrate and making a second electric current flow in the semiconductor substrate. A number of the plurality of probes used in the measuring of the second characteristic is larger than a number of the plurality of probes used in the measuring of the first characteristic. The second electric current is larger than the first electric current.