Semiconductor Processing Apparatus Dynamic Substrate Positioning
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Solution Overview
Problem
Current semiconductor processing methods face challenges in efficiently controlling substrate temperatures and chamber ambient conditions, particularly in repetitive cycling between low and high temperatures, which affects material application and wafer processing uniformity, and is complicated by residue buildup and wafer position control issues during pressure transitions.
Innovation Solution
A processing method and apparatus that involve positioning a substrate at varying distances from a cooled pedestal to perform reaction cycles with distinct temperature and pressure conditions, using a controller to manage the substrate's position and gas injection, enabling fast and reliable temperature control and chamber cleaning.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If the substrate is held at a fixed distance from the cooled pedestal, then the processing conditions are stable, but the temperature control between steps is slow and inefficient
Solution Approach 1:
The substrate support is made dynamically adjustable in its position relative to the cooled pedestal. By varying the distance between the substrate and pedestal, the system can rapidly control cooling rates without requiring complex temperature regulation mechanisms. This dynamic positioning enables fast thermal management while maintaining operational simplicity.
2Productivity
If the substrate is cycled between high and low temperatures repeatedly, then different material states can be achieved, but the cycling time is excessively slow
Solution Approach 1:
The system changes the thermal management parameter by adjusting the substrate-pedestal distance rather than relying solely on temperature setpoint changes. This parameter change enables rapid transitions between hot and cold processing conditions, dramatically reducing the time required for temperature cycling and improving overall processing throughput.
3Manufacturing precision
If chemistries are applied at precise conditions, then material application quality is high, but residues build up in the chamber complicating subsequent steps
Solution Approach 1:
The system employs periodic action by cycling the substrate through different distances from the cooled pedestal in a regular pattern. This periodic positioning, combined with controlled chemistry application, allows precise material deposition during specific phases while enabling chamber cleaning during other phases, thereby preventing residue accumulation that would otherwise compromise subsequent processing steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for efficient and repeatable exposure of wafers to precise chemistries, facilitating faster and more reliable semiconductor processing by minimizing cooldown times and residue formation, while ensuring uniformity and control during temperature and pressure transitions.
Implementation Method 1
cooldown of the chamber and substrate are very slow between a hot step and succeeding step that is many hundreds of degrees cooler
Implementation Method 2
performing a reaction cycle comprising carrying out a first process at the first distance, the first process having a first temperature and first pressure
Implementation Method 3
a heater positioned a third distance from the cooled pedestal
Data Source
AI summary
Methods of processing a semiconductor substrate and apparatus to process semiconductor substrates are described. The methods and apparatus described enable the repetitive cyclic low temperature application of a chemistry and high temperature treatment step to a substrate.