Semiconductor Protection Structure and Air Gaps for EMI Suppression
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Solution Overview
Problem
As semiconductor devices are scaled down, challenges arise in achieving improved quality, yield, performance, and reliability due to issues such as electromagnetic interference and increased parasitic capacitance, which existing technologies have not effectively addressed.
Innovation Solution
A semiconductor device design featuring a connecting dielectric layer with a copper, aluminum, or tungsten-based protection structure and air gaps, along with ferromagnetic or porous spacers, which suppress electromagnetic interference and reduce parasitic capacitance by using a method that involves forming sacrificial spacers and converting them into air gaps through energy treatment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If semiconductor devices are scaled down to improve computing ability, then device density and integration are improved, but electromagnetic interference and parasitic capacitance increase
Solution Approach 1:
A protection structure made of ferromagnetic material (such as permalloy) is introduced as an intermediary between signal lines. This protection structure acts as a shield that absorbs or redirects electromagnetic interference, preventing it from affecting adjacent structures. The ferromagnetic material serves as a mediator that manages electromagnetic fields without interfering with the scaled-down device functionality.
Solution Approach 2:
The patent modifies physical parameters by introducing air gaps between adjacent conductive structures. These air gaps change the electrical parameters (reducing parasitic capacitance) and electromagnetic parameters (affecting field distribution). By controlling the size, position, and material composition of these gaps, the patent optimizes electrical performance while maintaining miniaturization benefits.
2Productivity
If semiconductor devices are scaled down, then device density is improved, but parasitic capacitance increases
Solution Approach 1:
Air gaps are introduced as intermediary spaces between adjacent conductive structures. These gaps act as electrical isolators that reduce capacitive coupling between neighboring elements. The air gaps serve as mediators that maintain electrical independence while allowing physical proximity for high-density integration.
Solution Approach 2:
The patent employs structures with air gaps that create a porous-like configuration in the dielectric layer. This porous arrangement reduces the effective dielectric constant and minimizes parasitic capacitance between conductive elements. The gaps are strategically positioned to maximize electrical isolation while maintaining structural integrity and enabling continued device scaling.
3Reliability
If protection structures are added to suppress electromagnetic interference, then reliability is improved, but device complexity increases
Solution Approach 1:
The protection structure serves multiple functions simultaneously: it provides electromagnetic shielding, defines structural boundaries, and can be integrated with existing fabrication processes. The ferromagnetic material layer can be deposited using standard sputtering or evaporation techniques, making it compatible with existing CMOS fabrication lines. This multi-functionality reduces the need for additional specialized structures or processes.
Solution Approach 2:
The patent uses composite material structures combining ferromagnetic materials (such as permalloy - nickel iron alloy) with standard dielectric materials. This composite approach provides both electromagnetic shielding properties and mechanical structural support. The combination of materials allows optimization of each function independently while achieving overall system performance through their integration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design effectively suppresses electromagnetic interference and reduces parasitic capacitance, thereby enhancing the performance of semiconductor devices.
Implementation Method 1
A plurality of ferromagnetic spacers positioned between the first protection structure and the plurality of air gaps. The plurality of ferromagnetic spacers are formed of manganese-zinc ferrite, nickel-zinc ferrite, cobalt ferrite, strontium ferrite, barium ferrite, lithium ferrite, lithium-zinc ferrite, single crystal yttrium iron garnet, or gallium substituted single crystal yttrium iron garnet.
Implementation Method 2
performing an energy treatment to turn the plurality of sacrificial spacers into a plurality of air gaps. The plurality of sacrificial spacers are formed of an energy-removable material
Data Source
AI summary
The present application discloses a method for fabricating a semiconductor device with a protection structure for suppressing electromagnetic interference and air gaps for reducing parasitic capacitance. The method includes providing a first semiconductor die, forming a connecting dielectric layer above the first semiconductor die, forming a first trench in the connecting dielectric layer, forming a plurality of sacrificial spacers on sides of the first trench, forming a first protection structure in the first trench, and performing an energy treatment to turn the plurality of sacrificial spacers into a plurality of air gaps. The plurality of sacrificial spacers are formed of an energy-removable material and the first protection structure is formed of copper, aluminum, titanium, tungsten, or cobalt.