Semiconductor Device Protection Layer Hydrogen Blocking
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Solution Overview
Problem
Existing semiconductor devices, particularly display devices, face challenges in reducing manufacturing costs and improving reliability due to the complexity and thickness associated with using multiple types of semiconductor layers and gate electrodes, as well as the need to protect oxide semiconductor layers from hydrogenation defects.
Innovation Solution
The use of a semiconductor device structure comprising a first insulating film with a polycrystalline silicon semiconductor layer, an oxide semiconductor layer, and a protection layer of aluminum oxide or fluorinated silicon nitride between the insulating films, which reduces manufacturing processes and costs while enhancing the reliability of the oxide semiconductor layer by blocking hydrogen.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple types of semiconductor layers and gate electrodes are used, then the functionality of the display device is improved, but the manufacturing complexity and device thickness increase
Solution Approach 1:
The patent combines multiple semiconductor layers (first semiconductor layer and second semiconductor layer made of oxide semiconductor) and multiple gate electrodes (first gate electrode and second gate electrode) into a single integrated structure. This merging approach maintains the functional benefits of multiple components while reducing manufacturing complexity by treating them as a unified structure rather than separate components requiring individual processing steps.
Solution Approach 2:
The oxide semiconductor layer serves multiple functions simultaneously: it acts as a semiconductor channel layer, provides hydrogen blocking protection, and enables low-temperature processing. The unified gate electrode structure also serves dual purposes for controlling both the first and second semiconductor layers, reducing the need for separate control mechanisms and simplifying the overall device architecture.
2Adaptability or versatility
If multiple types of semiconductor layers and gate electrodes are used, then the functionality of the display device is improved, but the device thickness increases
Solution Approach 1:
The patent implements a nested structure where the first semiconductor layer and second semiconductor layer are vertically stacked, with the oxide semiconductor layer positioned between them. The gate electrodes are similarly nested, with the first gate electrode and second gate electrode arranged in overlapping configurations. This nesting approach allows multiple functional layers to occupy reduced vertical space, maintaining functionality while minimizing device thickness.
3Reliability
If oxide semiconductor layer is protected from hydrogenation, then the reliability of thin-film transistors is improved, but additional protection layers and processes are required
Solution Approach 1:
The oxide semiconductor layer is designed to serve dual functions: as the active semiconductor channel and as a hydrogen blocking layer. By selecting oxide semiconductor materials with inherent low hydrogen permeability, the structure provides transistor functionality while simultaneously protecting against hydrogenation defects, eliminating the need for separate protection layers and reducing overall structural complexity.
Solution Approach 2:
The oxide semiconductor layer protects itself and the underlying transistor structure from hydrogenation by virtue of its intrinsic material properties. The material's natural resistance to hydrogen permeation provides self-protection, eliminating the need for external protective measures and simplifying the device architecture while maintaining high reliability.
4Reliability
If protection layer is added to block hydrogen, then the reliability of oxide semiconductor layer is improved, but manufacturing complexity increases
Solution Approach 1:
The oxide semiconductor layer is formulated to provide both semiconductor functionality and hydrogen blocking protection through its inherent material properties. By selecting appropriate oxide semiconductor compositions with low hydrogen permeability, the structure achieves protection without requiring additional dedicated protection layers, thereby maintaining manufacturing simplicity while improving reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration simplifies the manufacturing process, reduces the thickness of the display device, and improves the reliability of the thin-film transistors by protecting the oxide semiconductor layer from hydrogen, thereby suppressing cost increases and enhancing the overall performance of the display device.
Implementation Method 1
a protection layer located between the second insulating film and the third insulating film, opposed to the second semiconductor layer, and formed of either an aluminum oxide or fluorinated silicon nitride
Data Source
AI summary
According to one embodiment, a semiconductor device includes a first insulating film, a first semiconductor layer formed of polycrystalline silicon, a second semiconductor layer formed of an oxide semiconductor, a second insulating film, a first gate electrode, a second gate electrode, a third insulating film formed of silicon nitride, and a protection layer. The protection layer is located between the second insulating film and the third insulating film, is opposed to the second semiconductor layer, and is formed of either an aluminum oxide or fluorinated silicon nitride.