Semiconductor Protection Layer for Plug Isolation
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Solution Overview
Problem
As semiconductor feature densities increase, the manufacturing of interconnect structures faces challenges in maintaining reliable connections and preventing short circuits while reducing device size, which affects performance and yield.
Innovation Solution
The implementation of a semiconductor structure that includes a substrate with gate structures, source drain structures, and a protection layer, where the protection layer is formed on the sidewalls and bottom of a recess to prevent over-etching and ensure electrical isolation of conductive plugs from gate structures, allowing for reduced device size and improved performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If feature densities increase to improve integration, then more components can be integrated into a given area, but the widths of conductive lines and spacing between conductive lines scale smaller making manufacturing more difficult
Solution Approach 1:
A protection layer is formed on the sidewalls and bottom of recesses before conductive plugs are deposited. This preliminary protective measure prevents over-etching and damage to underlying structures during subsequent manufacturing steps, enabling reliable fabrication of smaller features while maintaining manufacturing precision
Solution Approach 2:
The protection layer acts as an intermediary between the etching process and the underlying conductive structures. It provides a sacrificial barrier that protects critical features during manufacturing, allowing for smaller feature sizes without compromising the integrity of conductive lines and spacing
2Productivity
If device size is reduced to improve integration, then more components fit in given area, but reliability of connections and prevention of short circuits becomes more challenging
Solution Approach 1:
The protection layer converts the potential harm of over-etching and process variability into a benefit by providing a controlled sacrificial barrier. This ensures reliable electrical isolation of conductive plugs from gate structures even as device dimensions shrink, maintaining connection reliability through reduced device size
Solution Approach 2:
By forming the protection layer before conductive plug deposition, the patent establishes a preliminary safeguard that ensures reliable connections and prevents short circuits. This advance protective measure allows devices to be scaled down while maintaining connection integrity through proper electrical isolation
Data Source
AI summary
A semiconductor structure includes a substrate, at least one first gate structure, at least one first spacer, at least one source drain structure, at least one conductive plug, and at least one protection layer. The first gate structure is present on the substrate. The first spacer is present on at least one sidewall of the first gate structure. The source drain structure is present adjacent to the first spacer. The conductive plug is electrically connected to the source drain structure. The protection layer is present between the conductive plug and the spacer.