Semiconductor Surface Protective Film Insulation Reliability
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Solution Overview
Problem
The surface protective films and sealing resins used in semiconductor devices, such as polyimide and gel, are prone to moisture absorption, leading to potential dissolution or reaction with the surface electrode, which can impair insulation reliability by causing separation and leakage paths.
Innovation Solution
A semiconductor device design where the surface protective film is made of a different insulating material than the peripheral structure, with the peripheral structure engaged in the surface protective film to prevent separation, ensuring insulation protection and improved reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a surface protective film (polyimide or gel) is used to cover the surface electrode, then the surface electrode is protected, but the film absorbs moisture in high humidity which causes dissolution or reaction with the electrode, leading to separation and leakage paths that impair insulation reliability
Solution Approach 1:
The protective structure is divided into two distinct segments: a peripheral structure made of moisture-resistant insulating material and a surface protective film made of stress-relieving material. This segmentation allows each component to perform its specialized function - the peripheral structure blocks moisture while the surface protective film relieves stresses, together solving the contradiction between moisture resistance and stress relief.
Solution Approach 2:
The invention uses a composite protective structure combining two different insulating materials with complementary properties. The peripheral structure uses moisture-resistant material while the surface protective film uses stress-relieving material, creating a composite system that simultaneously achieves both moisture resistance and stress relief without either material needing to perform both functions alone.
2Adaptability or versatility
If a single material is used for both the peripheral structure and surface protective film, then manufacturing is simplified, but no single material can simultaneously provide both moisture resistance and stress relief capabilities
Solution Approach 1:
Different regions of the protective structure are assigned different material properties tailored to local requirements. The peripheral structure region uses moisture-resistant material while the surface protective film region uses stress-relieving material. This local differentiation of material quality allows each region to optimize for its specific function while the overall structure remains relatively simple.
Data Source
AI summary
A semiconductor substrate has a first surface and a second surface that includes an inner region and an outer region. The semiconductor substrate includes a drift layer of a first conductivity type and a terminal well region of a second conductivity type. The terminal well region includes a portion that extends from between the inner region and the outer region toward the outer region. A first electrode is on the first surface. A second electrode is on at least part of the inner region and electrically connected to the terminal well region, and has its edge located on a boundary between the inner region and the outer region. A peripheral structure is provided on part of the outer region, away from the second electrode. A surface protective film covers the edge of the second electrode and at least part of the outer region and has the peripheral structure engaged therein.