Semiconductor Protective Layer Anti-Stress Zone Design

The patent applies local quality by creating a non-uniform thickness distribution in the protective layers. Specifically, the protective layers are designed with varying thicknesses where certain regions have greater thickness to provide enhanced stress distribution and protection at critical areas, while other regions maintain standard thickness. This localized variation in thickness allows the structure to better handle stress concentrations without compromising overall protection coverage.

The patent implements curvature by replacing sharp corner geometries with rounded or curved transitions. The protective layers incorporate curved surfaces and rounded corners instead of abrupt angular changes. This curvature design helps to distribute stress more evenly across the corner regions, preventing stress concentration that would otherwise lead to cracks or separations at the corners of the stacked protective layers.

The patent replaces sharp corner geometries with curved or rounded corner designs in the protective layers. This curvature modification eliminates abrupt angular transitions that cause stress concentration, while still maintaining precise geometric control through manufacturing processes. The curved corners provide smoother stress distribution paths, preventing cracks and separations while preserving manufacturing precision through controlled geometric formation.

The patent applies local quality by creating specific geometric modifications only at corner regions while maintaining standard precision requirements for other areas. The corner regions feature specialized curved or rounded geometries with controlled radius, while the bulk of the protective layers maintains standard flat geometries. This localized geometric variation addresses stress concentration at corners without compromising overall manufacturing precision.