Semiconductor Protective Layer Anti-Stress Zone Design
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Solution Overview
Problem
Conventional semiconductor structures experience stress concentration at corners where protective layers overlap, leading to potential cracking or separation, which reduces production yield.
Innovation Solution
Incorporating anti-stress zones in the protective layers, specifically designed with triangular shapes and interconnected lateral sides, to distribute stress evenly and prevent concentration at corners.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If protective layers are stacked in a conventional quadrangle shape, then the structure is simple to manufacture, but stress concentrates at the corners causing cracks or separations
Solution Approach 1:
The patent applies local quality by modifying only the corner regions of the protective layers while maintaining the overall quadrangle shape. Each protective layer includes rounded corners with radii between 0.5mm to 2mm, and optionally chamfered edges at 45-degree angles. This localized modification redistributes stress away from the corner points without requiring a complete redesign of the entire protective layer structure, thus maintaining ease of manufacture while significantly improving reliability by preventing stress concentration-induced cracks and separations.
2Reliability
If protective layers are stacked to provide comprehensive protection, then protection coverage is improved, but stress concentration at overlapping corners increases
Solution Approach 1:
The patent applies spheroidality by rounding the corners of each protective layer instead of maintaining sharp 90-degree angles. The rounded corners have radii of curvature between 0.5mm to 2mm, which creates a gradual transition zone that distributes mechanical stress more evenly across the layer interfaces. This curvature modification maintains comprehensive protection coverage while eliminating the stress concentration points that would otherwise cause cracking or separation at the overlapping corners of stacked protective layers.
Data Source
AI summary
A semiconductor structure includes a carrier, a first protective layer, a second protective layer, and a third protective layer. A first surface of the first protective layer comprises a first anti-stress zone. The second protective layer reveals the first anti-stress zone and comprises a second surface, a first lateral side, a second lateral side and a first connection side. The second surface comprises a second anti-stress zone. An extension line of the first lateral side intersects with an extension line of the second lateral side to form a first intersection point. A zone formed by connecting the first intersection point and two points of the first connection side is the first anti-stress zone. The third protective layer reveals the second anti-stress zone and comprises a second connection side projected on the first surface to form a projection line parallel to the first connection side.