Semiconductor Device Protruding Upper Electrode Margin Reduction
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving high integration and improved electrical characteristics, particularly in reducing the margin region between the cell array and peripheral circuit regions, which affects their performance and efficiency.
Innovation Solution
The semiconductor device incorporates a substrate with a cell array and peripheral regions, featuring lower electrodes, supporter layers, dielectric layers, upper electrodes, interlayer insulating layers, and oxide layers. The upper electrode has protruding regions extending towards the peripheral region, and oxide layers are strategically placed between the upper electrode and contact plugs to enhance electrical connectivity and reduce the margin region.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the margin region between cell array region and peripheral circuit region is reduced to achieve higher integration, then device integration density is improved, but electrical isolation between upper electrode and peripheral contact plug becomes compromised leading to current leakage
Solution Approach 1:
An oxide layer is introduced as an intermediary substance between the upper electrode and the peripheral contact plug. This oxide layer acts as a mediator that provides electrical isolation while allowing the physical distance between components to be reduced, thus enabling higher integration density without compromising electrical isolation reliability.
Solution Approach 2:
The space between the upper electrode and peripheral contact plug is segmented by introducing an oxide layer. This segmentation creates distinct functional zones: the upper electrode region, the oxide isolation layer, and the peripheral contact plug region, allowing reduced spacing while maintaining proper electrical isolation.
2Reliability
If oxide layer is added to maintain electrical isolation, then current leakage is prevented, but device complexity increases
Solution Approach 1:
The oxide layer serves multiple functions simultaneously: it provides electrical isolation between the upper electrode and peripheral contact plug, prevents current leakage, and enables reduced margin regions for higher integration. By making the oxide layer multi-functional, the patent avoids adding complex isolation structures while achieving reliable electrical isolation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables a highly integrated semiconductor device with improved electrical characteristics, reducing current leakage and allowing for a more compact design while maintaining effective electrical connectivity between the upper electrode and peripheral contact plugs.
Implementation Method 1
a first oxide layer between the upper electrode and the peripheral contact plug
Implementation Method 2
The upper electrode comprises at least one protruding region protruding in a lateral direction parallel to the upper surface of the substrate and extending from the cell array region toward the peripheral region
Implementation Method 3
an interlayer insulating layer covering an upper surface and a side surface of the upper electrode
Data Source
AI summary
A semiconductor device includes a substrate having a cell array region and a peripheral region, lower electrodes disposed on the cell array region, at least one supporter layer contacting the lower electrodes, a dielectric layer covering the lower electrodes and the at least one supporter layer, an upper electrode covering the dielectric layer, an interlayer insulating layer covering an upper surface and a side surface of the upper electrode, a peripheral contact plug passing through the interlayer insulating layer on the peripheral region of the substrate, and a first oxide layer between the upper electrode and the peripheral contact plug. The upper electrode includes at least one protruding region protruding in a lateral direction from the cell array region toward the peripheral region. The first oxide layer is disposed between the at least one protrusion region and the peripheral contact plug.