Semiconductor Protrusions for Bonding Strength
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Solution Overview
Problem
The challenge in scaling down semiconductor devices is to achieve improved quality, yield, performance, and reliability while reducing complexity, particularly in connecting multiple devices efficiently and reliably.
Innovation Solution
A semiconductor device design featuring a connecting structure with a first semiconductor structure, a connecting insulating layer, connecting contacts, and supporting contacts, where the connecting contacts and supporting contacts protrude from the insulating layer, allowing for efficient bonding between multiple semiconductor devices, and a method for fabricating this device involving the formation of a porous layer to enhance bonding strength and prevent dielectric interference.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If conventional flat bonding surfaces are used to connect semiconductor devices, then the bonding process is simple, but the bonding strength is insufficient and metal-to-metal bonding may interfere with insulating layers
Solution Approach 1:
The patent applies curvature by forming protrusions on the bonding surfaces of semiconductor devices. These protrusions feature curved or rounded top surfaces that enable reliable metal-to-insulator bonding. The curved geometry prevents sharp edges from directly contacting metal pads on adjacent devices, thereby avoiding dielectric interference while maintaining strong bonding strength.
Solution Approach 2:
The patent transitions from a two-dimensional flat bonding surface to a three-dimensional protruding structure. By adding vertical dimensionality with protrusions that extend above the insulating layer, the bonding interface gains enhanced mechanical strength and electrical isolation. This dimensional change allows the bonding surface to engage multiple layers simultaneously (metal pad to protrusion top surface, and protrusion side walls to surrounding structures).
2Productivity
If multiple semiconductor devices are connected using traditional methods, then the connection process is straightforward, but the volume and cost increase
Solution Approach 1:
The patent implements nesting by placing protrusions within recesses or complementary structures on adjacent semiconductor devices. The protrusions from one device fit into corresponding features on the bonding surface of the next device, creating an interlocking nested arrangement. This nested configuration enables multiple devices to be stacked or connected in compact formations, reducing overall volume while maintaining connection efficiency.
3Reliability
If protrusions are formed on bonding surfaces to improve bonding strength, then bonding reliability increases, but the manufacturing process becomes more complex
Solution Approach 1:
The patent applies preliminary action by forming protrusions on the bonding surfaces during the semiconductor device fabrication process, before the actual bonding operation. The protrusions are created as part of the insulating layer formation sequence, using standard semiconductor processing techniques such as deposition and patterning. This preliminary formation of bonding features integrates smoothly into existing manufacturing workflows, minimizing additional process complexity while ensuring bonding reliability is established in advance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enables the connection of multiple semiconductor devices with improved bonding strength and reliability, reducing volume and cost while preventing metal-to-metal bonding interference with insulating layers, thereby enhancing overall device performance.
Implementation Method 1
preventing metal-to-metal bonding interference with insulating layers
Data Source
AI summary
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a first semiconductor structure, a first connecting structure positioned on the first semiconductor structure, and a second semiconductor structure positioned on the first connecting structure. The first connecting structure includes a first connecting insulating layer positioned on the first semiconductor structure, a plurality of first connecting contacts positioned in the first connecting insulating layer, and a plurality of first supporting contacts positioned in the first connecting insulating layer. The top surfaces of the plurality of first connecting contacts contact a bottom surface of the second semiconductor structure. A top surface of the plurality of first connecting contact and a top surface of the plurality of first supporting contact protrude from a top surface of the first connecting insulating layer.