Semiconductor Crystal Body Processing via Pulse Current Heating
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Solution Overview
Problem
The existing semiconductor crystal body processing method requires high temperatures, leading to lengthy processing times and potential chemical reactions between the semiconductor crystal body and pressurizing tools.
Innovation Solution
Applying a pulse-like current under pressurization to induce self heat generation and rapidly increase the temperature of the semiconductor crystal body, allowing for plastic deformation without heating the pressurizing tools to high temperatures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Shape
If the semiconductor crystal body and pressurizing tool are heated to high temperatures for plastic deformation, then the crystal body can be processed into desired shapes, but the processing time increases significantly
Solution Approach 1:
The pressurizing tool is preheated to a temperature lower than the crystal body's processing temperature before the crystal body is placed. This preliminary heating action reduces the temperature gradient and allows faster heating of the crystal body to the required processing temperature, thereby reducing overall processing time while achieving the desired shape.
Solution Approach 2:
The patent employs periodic heating cycles where the pressurizing tool is heated in intervals rather than continuously maintained at high temperature. This periodic heating approach reduces cumulative heating time and allows the system to achieve the necessary temperature conditions for plastic deformation more efficiently, reducing total processing time while maintaining shape control.
2Strength
If high temperature heating is applied to the semiconductor crystal body and pressurizing tool, then plastic deformation can be achieved, but chemical reactions may occur between the crystal body and pressurizing tool
Solution Approach 1:
The patent applies different temperature conditions to different components: the pressurizing tool is heated to a lower temperature than the semiconductor crystal body. This local quality differentiation ensures that the crystal body reaches the necessary temperature for plastic deformation while the pressurizing tool remains at a temperature that prevents chemical reactions, thus eliminating the harmful effect while maintaining the desired strength and deformation capability.
3Temperature
If the entire system including pressurizing tool is heated to high temperature, then the semiconductor crystal body reaches processing temperature, but energy consumption and heating time increase
Solution Approach 1:
The pressurizing tool serves as an intermediary heating element that is preheated to a moderate temperature. This intermediary approach allows efficient heat transfer to the semiconductor crystal body without requiring the entire system to be heated to the crystal body's processing temperature. The preheated tool acts as a thermal mediator, reducing the energy required to reach the target temperature and decreasing overall heating time while achieving the necessary processing temperature for the crystal body.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method significantly reduces processing time and prevents chemical reactions, enabling faster and more efficient shaping of semiconductor crystal bodies with increased flexibility in tool material selection.
Implementation Method 1
applying a pulse-like current under pressurization to rapidly increase the temperature of the material by a self heat generation phenomenon
Data Source
AI summary
A semiconductor crystal body processing method includes providing a semiconductor crystal body, sandwiching the semiconductor crystal body between a pair of conductive pressurizing tools, applying a pulse-like current between the pair of pressurizing tools to heat the semiconductor crystal body to a target temperature equal to or higher than a temperature at which the semiconductor crystal body is plastically deformed by pressurization and lower than its melting point, and applying pressure and a pulse-like current between the pair of pressurizing tools to thereby maintain the temperature of the semiconductor crystal body at the target temperature and mold the semiconductor crystal body into a target shape by plastic deformation.